GS82032 ETC, GS82032 Datasheet - Page 10

• Manufacturer Part Number: GS82032
• Description: 64K x 32 2M Synchronous Burst SRAM
• Manufacturer: ETC

Capacitance
(T
Note: This parameter is sample tested.
Package Thermal Characteristics
Notes:
1.
2.
3.
4.
Rev: 1.09 7/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Control Input Capacitance
Input Capacitance
Output Capacitance
Junction to Ambient (at 200 lfm)
Junction to Ambient (at 200 lfm)
Junction to Case (TOP)
Undershoot Measurement and Timing
V
SS
A
– 2.0 V
= 25 C, f = 1 MH
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
For x18 configuration, consult factory.
50%
V
V
SS
IH
Parameter
Rating
Z
20% tKC
, V
DD
= 3.3 V)
Symbol
C
C
C
OUT
Layer Board
IN
I
single
four
10/23
Test conditions
V
V
V
DD
Symbol
OUT
IN
R
R
R
= 3.3 V
= 0 V
= 0 V
JA
JA
JC
V
Overshoot Measurement and Timing
DD
+- 2.0 V
50%
V
V
DD
IL
TQFP Max
40
24
9
Typ.
3
4
6
GS82032AT/Q-180/166/133/100
20% tKC
QFP Max
Max.
4
5
7
TBD
TBD
TBD
© 2000, Giga Semiconductor, Inc.
Unit
pF
pF
pF
Unit
C/W
C/W
C/W
Notes
1,2,4
1,2,4
3,4