K4R881869D Samsung semiconductor, K4R881869D Datasheet - Page 12

• Manufacturer Part Number: K4R881869D
• Description: 256/288Mbit RDRAM(D-die)
• Manufacturer: Samsung semiconductor

K4R571669D/K4R881869D
Electrical Conditions
a. V
b. V
c. Voltage undershoot is limited to -0.7V for a duration of less than 5ns.
d. Voltage overshoot is limited toV
T
V
V
v
V
V
V
V
R
V
V
V
V
V
DD,N,
J
DA
DD,
DD,N,
CMOS
REF
DIL
DIH
CM
CIS,CTM
CIS,CFM
IL,CMOS
IH,CMOS
CMOS
DIH
Symbol
V
is typically equal to V
v
DDA
a
V
DDA,N
must remain on as long as V
DDA,N
Junction temperature under bias
Supply voltage
Supply voltage droop (DC) during NAP interval (t
Supply voltage ripple (AC) during NAP interval (t
Supply voltage for CMOS pins (2.5V controllers)
Supply voltage for CMOS pins (1.8V controllers)
Reference voltage
RSL data input - low voltage @ t
RSL data input - low voltage @ t
RSL data input - high voltage
RSL data input - high voltage
RSL data asymmetry : R
RSL clock input - common mode V
RSL clock input swing: V
RSL clock input swing: V
CMOS input low voltage
CMOS input high voltage
TERM
CMOS
(1.8V±0.1V) under DC conditions in a system.
DD
+0.7V for a duration of less than 5ns
is applied and cannot be turned off.
Parameter and Conditions
DA
CIS
CIS
= (V
b
b
= V
= V
@ t
@ t
DIH
CYCLE
CYCLE
Table 9: Electrical Conditions
CIH
CIH
CYCLE
CYCLE
CM
- V
- V
- V
= (V
=1.875ns
=2.50ns
REF
CIL
CIL
=1.875ns
=2.50ns
) / (V
CIH
(CTM,CTMN pins).
(CFM,CFMN pins).
+V
Page 10
REF
NLIMIT
NLIMIT
CIL)
- V
/2
DIL
)
)
)
V
CMOS
V
V
2.50 - 0.13
V
V
1.80 - 0.1
1.40 - 0.2
REF
REF
REF
REF
0.225
- 0.3
Min
V
0.67
0.35
-2.0
1.3
/2 + 0.25
DD
-
-
+ 0.15
+ 0.2
- 0.5
- 0.5
c
Version 1.4 July 2002
Direct RDRAM
V
V
CMOS
V
2.50 + 0.13
V
V
V
1.80 + 0.2
1.40 + 0.2
CMOS
REF
REF
REF
REF
Max
V
1.00
1.00
1.00
100
2.0
2.0
1.8
DD
/2 - 0.25
- 0.15
+ 0.5
+ 0.5
- 0.2
+0.3
d
Unit
°C
V
%
%
V
V
V
V
V
V
V
V
V
V
-
™