RU1H35R RUICHIPS [Ruichips Semiconductor Co., Ltd], RU1H35R Datasheet

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RU1H35R

Manufacturer Part Number

RU1H35R

Description

N-Channel Advanced Power MOSFET

Manufacturer

RUICHIPS [Ruichips Semiconductor Co., Ltd]

Datasheet

1.RU1H35R.pdf (9 pages)

Current page: 1 of 9
Download datasheet (375Kb)

Copyright

Rev. A– FEB., 2011

Common Ratings

Mounted on Large Heat Sink

Drain-Source Avalanche Ratings

Features

Absolute Maximum Ratings

• 100V/40A,

•

•

• Lead Free and Green Devices Available

•

Switching application

Applications

Super High Dense Cell Design

100% avalanche tested

R

(RoHS Compliant)

DS (ON)

Symbol

E

V

V

T

R

I

P

AS

T

I

DSS

GSS

STG

I

DP

S

D

D

J

JC

③

Ruichips Semiconductor Co., Ltd

=21mΩ(tpy.)@V

Drain-Source Voltage

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

300μs Pulse Drain Current Tested

Continuous Drain Current

Maximum Power Dissipation

Thermal Resistance-Junction to Case

Avalanche Energy, Single Pulsed

(T

A

=25°C Unless Otherwise Noted)

GS

=10V

Parameter

N-Channel Advanced Power MOSFET

T

T

T

T

T

T

TO-220

C

C

C

C

C

C

TO-263

=25°C

=25°C

=25°C

=100°C

=25°C

=100°C

Pin Description

N-Channel MOSFET

-55 to 175

Rating

160

1.35

100

175

111

220

±25

40

40

27

56

TO-220F

TO-247

②

①

RU1H35R

www.ruichips.com

MOSFET

°C/W

Unit

mJ

°C

°C

W

V

A

A

A

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