RU2H15S RUICHIPS [Ruichips Semiconductor Co., Ltd], RU2H15S Datasheet

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RU2H15S

Manufacturer Part Number
RU2H15S
Description
N-Channel Advanced Power MOSFET
Manufacturer
RUICHIPS [Ruichips Semiconductor Co., Ltd]
Datasheet
Copyright
Rev. A– DEC., 2011
Common Ratings
Mounted on Large Heat Sink
Drain-Source Avalanche Ratings
• High Frequency DC-DC Converters
Features
Absolute Maximum Ratings
• 200V/15A,
• Ultra Low On-Resistance
• Lead Free and Green Devices Available
Applications
Super High Dense Cell Design
100% avalanche tested
R
(RoHS Compliant)
DS (ON)
Symbol
E
V
V
T
R
I
P
AS
T
I
DSS
GSS
STG
I
DP
S
D
D
J
JC
Ruichips Semiconductor Co., Ltd
=200mΩ(tpy.)@V
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300μs Pulse Drain Current Tested
Continuous Drain Current(V
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Avalanche Energy, Single Pulsed
(T
C
=25°C Unless Otherwise Noted)
GS
=10V
Parameter
GS
N-Channel Advanced Power MOSFET
=10V)
T
T
T
T
T
T
C
C
C
C
C
C
=25°C
=25°C
=25°C
=100°C
=25°C
=100°C
Pin Description
N-Channel MOSFET
TO-263
-55 to 175
Rating
15
60
200
175
±20
15
1.8
10
83
41
23
RU2H15S
www.ruichips.com
MOSFET
°C/W
Unit
mJ
°C
°C
W
W
V
A
A
A

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RU2H15S Summary of contents

Page 1

... N-Channel Advanced Power MOSFET =10V Parameter T =25° =25° =25°C C =10V =100° =25° =100°C C RU2H15S MOSFET Pin Description TO-263 N-Channel MOSFET Rating 200 ±20 175 -55 to 175 ① 15 ② 60 ① 1.8 23 www.ruichips.com Unit V ° ...

Page 2

... DS Frequency=1.0MHz V =100V =15A GEN R =4.7 G ⑤ V =160V =15A DS = 60V 50Ω , Starting RU2H15S RU2H15S Min. Typ. Max. 200 =0V T =85° =0V ±100 200 250 107 542 5.6 670 115 =10V ...

Page 3

... Typical Characteristics Power Dissipation T - Junction Temperature (°C) j Safe Operation Area V - Drain-Source Voltage (V) DS Copyright Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 Drain Current T - Junction Temperature (°C) j Thermal Transient Impedance Square Wave Pulse Duration (sec) 3 RU2H15S www.ruichips.com ...

Page 4

... Typical Characteristics Output Characteristics V - Drain-Source Voltage (V) DS Drain-Source On Resistance V - Gate-Source Voltage (V) GS Copyright Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 Drain-Source On Resistance I - Drain Current (A) D Gate Threshold Voltage T - Junction Temperature (° RU2H15S www.ruichips.com ...

Page 5

... Typical Characteristics Drain-Source On Resistance T - Junction Temperature (°C) j Capacitance V - Drain-Source Voltage (V) DS Copyright Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 Source-Drain Diode Forward V - Source-Drain Voltage (V) SD Gate Charge Q - Gate Charge (nC RU2H15S www.ruichips.com ...

Page 6

... Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 6 RU2H15S www.ruichips.com ...

Page 7

... Ordering and Marking Information Device Marking RU2H15S RU2H15S Copyright Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 Package Packaging Quantity TO-263 Tube 7 RU2H15S Reel Size Tape width 50 - www.ruichips.com - ...

Page 8

... L4 0.048 - 0.052 L2 θ 0.013 - 0.019 θ 0.048 - 0.052 1 θ 0.338 0.343 0.346 2 0.394 0.4 0.404 DEP 0.1BSC Øp1 0.579 0.594 0.610 8 RU2H15S MM INCH MIN NOM MAX MIN NOM 2.00 2.30 2.60 0.079 0.090 1.17 1.27 1.40 0.046 0.050 - - 1. 0.25BSC 0.01BSC 2.50REF. 0.098REF. 0° - 8° 0° - 5° ...

Page 9

... Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 9 RU2H15S www.ruichips.com ...

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