RU1HC2H RUICHIPS [Ruichips Semiconductor Co., Ltd], RU1HC2H Datasheet
RU1HC2H
Related parts for RU1HC2H
RU1HC2H Summary of contents
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... Complementary Advanced Power MOSFET =10V GS =4.5V GS =-10V GS =-4.5V GS Complementary MOSFET Parameter =25°C C =25° =25° =70° =25° =70°C C RU1HC2H MOSFET Pin Description SOP-8 N -Channel P Channel 100 -100 ±20 ±20 150 150 -55 to 150 -55 to 150 3.5 -2.5 ① ① 14 -10 3.5 -2.5 2 1.3 °C/W 62 ...
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... I =-1. =1A =-1A N-Channel I =3.5A /dt=100A P-Channel N I =-2.5A /dt=100A RU1HC2H RU1HC2H Unit Min. Typ. Max. 100 V -100 -30 1.5 2 2.7 V -1.5 -2 -2.7 A ±10 ± 155 170 175 195 1.2 V -1.2 ...
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... P-Channel N V =-50V =-2.5A -10V, DS GEN N-Channel V =80V 10V =3. P-Channel P V =-80V -10V =-2. RU1HC2H 1520 1630 134 pF 191 www.ruichips.com ...
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... Typical Characteristics（N-Channel） Power Dissipation T - Junction Temperature (°C) j Safe Operation Area V - Drain-Source Voltage (V) DS Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 Drain Current T - Junction Temperature (°C) j Thermal Transient Impedance Square Wave Pulse Duration (sec) 4 RU1HC2H www.ruichips.com ...
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... Typical Characteristics(N-Channel) Output Characteristics V - Drain-Source Voltage (V) DS Drain-Source On Resistance V - Gate-Source Voltage (V) GS Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 Drain-Source On Resistance I - Drain Current (A) D Gate Threshold Voltage T - Junction Temperature (° RU1HC2H www.ruichips.com ...
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... Typical Characteristics(N-Channel) Drain-Source On Resistance T - Junction Temperature (°C) j Capacitance V - Drain-Source Voltage (V) DS Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 Source-Drain Diode Forward V - Source-Drain Voltage (V) SD Gate Charge Q - Gate Charge (nC RU1HC2H www.ruichips.com ...
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... Typical Characteristics(P-Channel) Power Dissipation T - Junction Temperature (°C) j Safe Operation Area -V - Drain-Source Voltage (V) DS Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 Drain Current T - Junction Temperature (°C) j Thermal Transient Impedance Square Wave Pulse Duration (sec) 7 RU1HC2H www.ruichips.com ...
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... Typical Characteristics(P-Channel) Output Characteristics -V - Drain-Source Voltage (V) DS Drain-Source On Resistance -V - Gate-Source Voltage (V) GS Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 Drain-Source On Resistance -I - Drain Current (A) D Gate Threshold Voltage T - Junction Temperature (° RU1HC2H www.ruichips.com ...
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... Typical Characteristics(P-Channel) Drain-Source On Resistance T - Junction Temperature (°C) j Capacitance -V - Drain-Source Voltage (V) DS Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 Source-Drain Diode Forward -V - Source-Drain Voltage (V) SD Gate Charge Q - Gate Charge (nC RU1HC2H www.ruichips.com ...
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... Ordering and Marking Information RU1HC2 Package (Available SOP-8 Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 10 RU1HC2H www.ruichips.com ...
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... MAX MIN 0.053 0.069 E 3.800 0.004 0.010 E1 5.800 0.053 0.061 e 1.270 (BSC) 0.013 0.020 L 0.400 θ 0.006 0.010 0° 0.185 0.200 11 RU1HC2H MM INCH MAX MIN MAX 4.000 0.150 0.157 6.200 0.228 0.244 0.050 (BSC) 1.270 0.016 0.050 8° 0° 8° www.ruichips.com ...
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... Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 12 RU1HC2H www.ruichips.com ...