RU4H10P RUICHIPS [Ruichips Semiconductor Co., Ltd], RU4H10P Datasheet

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RU4H10P

Manufacturer Part Number
RU4H10P
Description
N-Channel Advanced Power MOSFET
Manufacturer
RUICHIPS [Ruichips Semiconductor Co., Ltd]
Datasheet
Copyright
Rev. A – FEB., 2012
Common Ratings
Mounted on Large Heat Sink
Drain-Source Avalanche Ratings
Features
Absolute Maximum Ratings
• 400V/10A,
• Extremely high dv/dt capability
• Lead Free and Green Available
supplies
Applications
Gate charge minimized
Low Crss( Typ. 18pF)
100% avalanche tested
High efficiency switch mode power
Lighting
R
DS (ON)
Symbol
E
V
V
T
R
I
P
AS
T
I
DSS
GSS
STG
I
DP
S
D
D
J
JC
Ruichips Semiconductor Co., Ltd
=
0.45
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300μs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Avalanche Energy, Single Pulsed
(Typ.)
(T
C
=25°C Unless Otherwise Noted)
@
V
GS
=10V
Parameter
N-Channel Advanced Power MOSFET
T
T
T
T
T
T
C
C
C
C
C
C
=25°C
=25°C
=25°C
=100°C
=25°C
=100°C
Pin Description
N-Channel MOSFET
TO-220F
-55 to 150
Rating
6.4
40
10
400
150
100
±30
4.6
10
27
11
RU4H10P
www.ruichips.com
MOSFET
°C/W
Unit
mJ
°C
°C
W
V
A
A
A

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RU4H10P Summary of contents

Page 1

... Avalanche Energy, Single Pulsed E AS Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 N-Channel Advanced Power MOSFET V =10V GS Parameter RU4H10P MOSFET Pin Description TO-220F N-Channel MOSFET Rating 400 ±30 150 -55 to 150 =25° ① =25° ① ...

Page 2

... V = 200V, DS Frequency=1.0MHz V =200V =10A GEN R =25 G ④ V =320V =10A DS = 100V 50Ω , Starting RU4H10P RU4H10P Min. Typ. Max. 400 = =85° =0V ±100 0.45 0.55 250 2.3 10 1060 175 10V 10V, 3 ...

Page 3

... Typical Characteristics Power Dissipation T - Junction Temperature (°C) j Safe Operation Area V - Drain-Source Voltage (V) DS Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 Drain Current T - Junction Temperature (°C) j Thermal Transient Impedance Square Wave Pulse Duration (sec) 3 RU4H10P www.ruichips.com ...

Page 4

... Typical Characteristics Output Characteristics V - Drain-Source Voltage (V) DS Drain-Source On Resistance V - Gate-Source Voltage (V) GS Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 Drain-Source On Resistance I - Drain Current (A) D Gate Threshold Voltage T - Junction Temperature (° RU4H10P www.ruichips.com ...

Page 5

... Typical Characteristics Drain-Source On Resistance T - Junction Temperature (°C) j Capacitance V - Drain-Source Voltage (V) DS Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 Source-Drain Diode Forward V - Source-Drain Voltage (V) SD Gate Charge Q - Gate Charge (nC RU4H10P www.ruichips.com ...

Page 6

... Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 6 RU4H10P www.ruichips.com ...

Page 7

... Ordering and Marking Information Device Marking RU4H10P RU4H10P Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 Package Packaging TO-220F Tube 7 RU4H10P Quantity Reel Size Tape width 50 - www.ruichips.com - ...

Page 8

... G 0.346 0.354 0.362 G1 0.255 0.263 0.271 G2 0.1BSC b1 - 0.125 - b2 0.503 0.511 0.519 b3 0.354 0.362 0.370 E1 0.055 0.059 0.063 K1 0.045 0.047 0.049 8 RU4H10P MM INCH MIN NOM MAX MIN NOM - 3.450 - - 0.136 5° 7° 9° 5° 7° - 45° 45° 0.05 0.10 0.15 0.002 0.004 1.90 2.00 2.10 0.075 0.079 13 ...

Page 9

... Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 9 RU4H10P www.ruichips.com ...

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