RU1HL13K RUICHIPS [Ruichips Semiconductor Co., Ltd], RU1HL13K Datasheet - Page 2

• Manufacturer Part Number: RU1HL13K
• Description: P-Channel Advanced Power MOSFET
• Manufacturer: RUICHIPS [Ruichips Semiconductor Co., Ltd]

Electrical Characteristics
Copyright
Rev. A– AUG., 2012
Static Characteristics
Diode Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Notes:
R
Symbol
BV
V
DS(ON)
V
t
t
d(OFF)
C
I
I
C
C
d(ON)
Q
Q
GS(th)
R
Q
DSS
GSS
SD
Q
t
t
t
oss
rss
rr
iss
DSS
gd
r
f
gs
G
rr
g
③
③
Ruichips Semiconductor Co., Ltd
Limited by T
Pulse test ; Pulse width 300 s, duty cycle 2%.
Guaranteed by design, not subject to production testing.
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulse width limited by safe operating area.
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Jmax
Parameter
, I
④
AS
=15A, V
④
DD
=-48V, R
(T
C
G
I
I
V
V
V
Frequency=1.0MHz
V
I
R
V
I
V
V
V
V
V
V
=25°C Unless Otherwise Noted)
SD
SD
DS
DS
= 50Ω , Starting T
GS
GS
DS
DD
DS
G
GS
DS
DS
GS
GS
GS
=-1A, V
=-13A, dl
=-13A, V
=6
=-13A
=-25V,
=-50V, R
=-80V, V
=0V,V
=0V,
= -100V, V
=V
=0V, I
=±16V, V
= -10V, I
= -4.5V, I
2
Test Condition
GS
, I
DS
DS
GS
DS
GEN
SD
=0V,F=1MHz
=-250 A
=0V
GS
DS
L
=-250 A
DS
DS
=3.8 ,
/dt=100A/ s
= -10V,
GS
=-8A
=-10V,
=0V
=-6A
=0V
J
T
= 25°C.
J
=85°C
Min.
-100
-1.5
RU1HL13K
1089
Typ.
616
191
160
180
28
10
35
65
10
13
16
31
18
RU1HL13K
9
-2
www.ruichips.com
Max.
-2.7
-1.2
±10
200
250
-30
-1
Unit
m
m
nC
nC
pF
ns
ns
V
V
V
A
A