RU40120R RUICHIPS [Ruichips Semiconductor Co., Ltd], RU40120R Datasheet - Page 2

• Manufacturer Part Number: RU40120R
• Description: N-Channel Advanced Power MOSFET
• Manufacturer: RUICHIPS [Ruichips Semiconductor Co., Ltd]

Electrical Characteristics
Copyright
Rev. A– APR., 2011
Static Characteristics
R
Diode Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Notes:
Symbol
DS(ON)
BV
V
V
t
t
d(OFF)
C
I
I
C
C
d(ON)
Q
Q
GS(th)
R
Q
DSS
GSS
SD
Q
t
t
t
oss
rss
rr
iss
DSS
gd
r
f
gs
G
rr
g
④
④
Ruichips Semiconductor Co., Ltd
Pulse width limited by safe operating area..
Limited by T
Pulse test ; Pulse width 300 s, duty cycle 2%.
Guaranteed by design, not subject to production testing.
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Calculated continuous current based on maximum allowable junction temperature. Limited by bonding
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance V
wire.
Jmax
Parameter
, I
⑤
AS
=40A, V
⑤
DD
= 32V, R
(T
G
A
I
I
V
V
V
Frequency=1.0MHz
V
I
R
V
I
V
V
V
V
=25°C Unless Otherwise Noted)
SD
SD
DS
DS
= 47Ω , Starting T
GS
GS
DS
DD
DS
G
GS
DS
DS
GS
GS
=60A, V
=60A, dl
=60A, V
=4.7
=60A
= 20V,
=20V, R
=32V, V
=0V,V
=0V,
= 40V, V
=V
=0V, I
=±20V, V
= 10V, I
2
Test Condition
GS
, I
DS
DS
DS
GS
GEN
SD
GS
DS
=0V,F=1MHz
L
=250 A
GS
=30 ,
=250 A
=0V
/dt=100A/ s
DS
= 10V,
=60A
= 10V,
=0V
=0V
J
T
= 25°C.
J
=85°C
Min.
40
2
RU40120R
3700
Typ.
680
345
205
0.8
1.8
90
32
37
33
30
36
85
45
3.5
RU40120R
www.ruichips.com
3
Max.
±100
4.5
1.2
10
4
1
Unit
m
nC
nC
nA
pF
ns
ns
V
V
V
A