K4H510438A-TCA0 SAMSUNG [Samsung semiconductor], K4H510438A-TCA0 Datasheet - Page 32

• Manufacturer Part Number: K4H510438A-TCA0
• Description: 128Mb DDR SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

128Mb DDR SDRAM
3.3.14 Power down
mode is initiated, all of the receiver circuits except clock, CKE and DLL circuit tree are gated off to reduce
power consumption. All banks should be in idle state prior to entering the precharge power down mode and
CKE should be set high at least 1tck+tIS prior to row active command . During power down mode, refresh
operations cannot be performed, therefore the device cannot be remained in power down mode longer than
the refresh period(Data retension time) of the device.
The power down mode is entered when CKE is low and exited when CKE is high. Once the power down
Command
CKE
CK
CK
Precharge
Precharge
power
Entry
down
Figure 23. Power down entry and exit timing
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Active
REV. 1.0 November. 2. 2000
Active
power
down
Entry
Active
power
down
Exit
Read