SSD30P06-45D SECOS [SeCoS Halbleitertechnologie GmbH], SSD30P06-45D Datasheet
SSD30P06-45D
Manufacturer Part Number
SSD30P06-45D
Description
P-Ch Enhancement Mode Power MOSFET
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.SSD30P06-45D.pdf
(4 pages)
http://www.SeCoSGmbH.com/
16-Aug-2010 Rev.A
DESCRIPTION
FEATURES
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
These miniature surface mount MOSFETs utilize high cell density process.
Low R
device ideal for use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Total Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
a.
b.
Notes：
V
Low R
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Extended V
DS
-60
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
DS(on)
(V)
DS(on)
Elektronische Bauelemente
assures minimal power loss and conserves energy, making this
PRODUCT SUMMARY
provides higher efficiency and extends battery life.
GS
60@V
49@V
R
range (±25) for battery pack applications.
PARAMETER
DS
(on) m(
GS
GS
b
= -4.5V
= -10V
a
a
(T
THERMAL RESISTANCE RATINGS
A suffix of “-C” specifies halogen free
I
D
A
28
24
(A)
= 25°C unless otherwise specified)
RoHS Compliant Product
a
a
P
I
D
SYMBOL
D
@T
@T
T
Gate
J
R
R
V
V
, T
I
DM
I
θJC
A
θJA
GS
DS
S
A
=25℃
=25℃
STG
P-Ch Enhancement Mode Power MOSFET
Source
Drain
28A, -60V, R
SSD30P06-45D
RATINGS
-55 ~ 175
±20
±40
-60
-30
3.0
50
61
50
Any changes of specification will not be informed individually.
DS(ON)
REF.
G
A
B
C
D
E
F
H
M
TO-252(D-Pack)
Min.
5.20
2.20
0.45
2.40
5.40
6.4
6.8
0.8
Millimeter
49mΩ
A
B
K
J
Max.
5.50
2.40
0.58
1.20
6.8
7.3
3.0
6.2
°C / W
°C / W
UNIT
G E
H
F
REF.
°C
W
M
O
V
V
A
A
A
K
N
P
J
Page 1 of 4
Min.
0.70
0.50
0.43
0.9
Millimeter
2.30 REF.
0
N
O
C
D
P
Max.
0.90
0.15
0.58
1.1
1.6
Related parts for SSD30P06-45D
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
2.0 AMP Surface Mount Schottky Barrier Rectifiers
Manufacturer:
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet:
Part Number:
Description:
VOLTAGE 50 ~ 1000 V, 4.0AMP Glass Passivated Bridge Rectifiers
Manufacturer:
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet:
Part Number:
Description:
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
Manufacturer:
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet:
Part Number:
Description:
P-Channel Enhancement Mode Mos.FET
Manufacturer:
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet:
Part Number:
Description:
-2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET
Manufacturer:
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet:
SSD30P06-45D Summary of contents
Page 1
... SYMBOL =25℃ =25℃ STG THERMAL RESISTANCE RATINGS a R θJA R θJC SSD30P06-45D 28A, -60V, R 49mΩ DS(ON) TO-252(D-Pack Millimeter Millimeter REF. REF. Min. Max. Min. A 6.4 6.8 J 2.30 REF. B 5.20 5. ...
Page 2
... Dynamic d(on d(off SSD30P06-45D 28A, -60V, R 49mΩ DS(ON) TEST CONDITIONS - -250 μA DS GS, D ±100 0V ±20V -48V μA - -48V, V =0V -5V, V ...
Page 3
... V 1.8 GS 1.6 1.4 1.2 1 0.8 0.6 0 -50 SSD30P06-45D 28A, -60V, R 49mΩ DS(ON - 125 Gate-to-Source Voltage ( ...
Page 4
... -250μ 100 125 150 o C) 0.01 SINGLE PULSE 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) SSD30P06-45D 28A, -60V, R 49mΩ DS(ON Gate-to-Source Voltage ( -Resistance vs.Gate-to Source Voltage 0.001 0.01 0 ...