SSD30P06-45D SECOS [SeCoS Halbleitertechnologie GmbH], SSD30P06-45D Datasheet - Page 2

• Manufacturer Part Number: SSD30P06-45D
• Description: P-Ch Enhancement Mode Power MOSFET
• Manufacturer: SECOS [SeCoS Halbleitertechnologie GmbH]

http://www.SeCoSGmbH.com/
16-Aug-2010 Rev.A
ELECTRICAL CHARACTERISTICS
Notes
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
a.
b.
Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
Guaranteed by design, not subject to production testing.
Elektronische Bauelemente
PARAMETER
a
a
a
SYMBO MIN. TYP. MAX. UNIT
R
(T
V
T
T
I
I
I
DS(ON)
V
Q
D(on)
Q
GS(th)
Q
GSS
DSS
g
d(on)
d(off)
A
T
T
SD
fs
gs
gd
g
r
f
= 25°C unless otherwise specified)
Dynamic
-20
Static
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
10
35
12
8
5
2
8
-
-
-
-
-
-
-
-
b
P-Ch Enhancement Mode Power MOSFET
±100
-1.2
-10
49
60
-1
-
-
-
-
-
-
-
-
-
-
28A, -60V, R
SSD30P06-45D
mΩ
nC
nA
μA
nS
A
S
V
Any changes of specification will not be informed individually.
V
V
V
V
V
V
V
V
I
V
V
I
V
I
V
R
R
S
D
D
DS
DS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GEN
= -2.5 A, V
= -1 A
L
G
TEST CONDITIONS
= -28 A
= 30 
= 6 
DS(ON)
= V
= -48V, V
= -48V, V
= -15V, I
= -10V, I
= -4.5V, I
= -30 V
= 0V, V
= -5V, V
= -30 V
= -4.5 V
= -10 V
GS,
49mΩ
I
D
GS
D
D
= -250 μA
GS
GS
D
GS
GS
= -28A
= -28A
= ±20V
= -24A
= -10V
= 0 V
= 0V
=0V, T
Page 2 of 4
J
=55°C