SSD30P06-45D SECOS [SeCoS Halbleitertechnologie GmbH], SSD30P06-45D Datasheet - Page 3

• Manufacturer Part Number: SSD30P06-45D
• Description: P-Ch Enhancement Mode Power MOSFET
• Manufacturer: SECOS [SeCoS Halbleitertechnologie GmbH]

http://www.SeCoSGmbH.com/
16-Aug-2010 Rev.A
CHARACTERISTIC CURVE
15
12
9
6
3
0
0
1.8
1.6
1.4
1.2
0.8
V
1
GS
0
= -10V
Elektronische Bauelemente
-10
-8
-6
-4
-2
0
0
1
On-Resistance vs. Drain Current
2
V
O
DS
6
u
- Drain-to-Source Voltage (V)
p t
t u
2
12
C
I
D
-4.5V
Qg, Charge (nC)
4
h
- Drain Current (A)
Gate Charge
r a
-4.5V
c a
18
e t
3
i r
i t s
6
s c
24
4
30
8
36
-10V
5
10
1.8
1.6
1.4
1.2
0.8
0.6
0.4
2
1
15
12
9
6
3
0
-50
1
V
GS
P-Ch Enhancement Mode Power MOSFET
= -10V
-25
2400
2000
1600
1200
800
400
0
On-Resistance vs. Junction Temperature
V
0
0
DS
On-Resistance vs. Junction Temperature
2
- Drain-to-Source Voltage (V)
28A, -60V, R
V
5
T
GS
SSD30P06-45D
a r
25
- Gate-to-Source Voltage (V)
n
10
f s
r e
Capacitance
Any changes of specification will not be informed individually.
50
T
A
C
= -55
3
15
h
r a
o
C
c a
75
DS(ON)
20
e t
i r
i t s
100
25
s c
125
49mΩ
4
o
C
30
25
125
o
C
150
Page 3 of 4
5
Ciss
Coss
Crss
175