IS61LV6416-10TL ISSI, Integrated Silicon Solution Inc, IS61LV6416-10TL Datasheet - Page 11

• Manufacturer Part Number: IS61LV6416-10TL
• Description: IC SRAM 1MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: Asynchronousr

Specifications of IS61LV6416-10TL

• Memory Size: 1M (64K x 16)
• Package / Case: 44-TSOP II
• Interface: Parallel
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 10 ns
• Supply Voltage (max): 3.63 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 120 mA
• Organization: 64 K x 16
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1039

IS61LV6416
IS61LV6416L
Integrated Silicon Solution, Inc.
Rev. I
11/22/05
DATA RETENTION SWITCHING CHARACTERISTICS
Note 1:
DATA RETENTION WAVEFORM
Symbol
V
I
t
t
DR
SDR
RDR
DR
Typical values are measured at V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
DD
CE
V
V
for Data Retention
DD
DR
DD
t
= 3.0V, T
SDR
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
See Data Retention Waveform
DD
= 2.0V, CE ≥ V
(CE Controlled)
A
= 25
O
C and not 100% tested.
DD
Data Retention Mode
CE ≥ V
– 0.2V
DD
- 0.2V
Options
IS61LV6416
IS61LV6416L
t
RDR
Min.
2.0
t
—
—
RC
0
Typ.
0.05
0.5
—
—
—
(1)
ISSI
Max.
3.6
1.5
10
—
—
Unit
mA
ns
ns
V
11
®
1
2
3
4
5
6
7
8
9
10
11
12