IS61LV6416-10TL ISSI, Integrated Silicon Solution Inc, IS61LV6416-10TL Datasheet - Page 6

• Manufacturer Part Number: IS61LV6416-10TL
• Description: IC SRAM 1MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: Asynchronousr

Specifications of IS61LV6416-10TL

• Memory Size: 1M (64K x 16)
• Package / Case: 44-TSOP II
• Interface: Parallel
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 10 ns
• Supply Voltage (max): 3.63 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 120 mA
• Organization: 64 K x 16
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1039

IS61LV6416
IS61LV6416L
AC WAVEFORMS
READ CYCLE NO. 1
READ CYCLE NO. 2
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = V
3. Address is valid prior to or coincident with CE LOW transition.
6
ADDRESS
ADDRESS
LB, UB
D
D
OUT
OUT
OE
CE
HIGH-Z
(1,2)
(1,3)
PREVIOUS DATA VALID
t
LZB
(Address Controlled) (CS = OE = V
t
LZCE
t
AA
t
DOE
t
LZOE
t
ACE
t
BA
t
OHA
t
RC
IL
.
t
AA
t
RC
DATA VALID
IL
, UB or LB = V
DATA VALID
t
t
t
HZOE
HZCE
HZB
Integrated Silicon Solution, Inc.
t
OHA
t
IL
OHA
)
READ1.eps
ISSI
11/22/05
Rev. I
®