IS61LV6416-10TL ISSI, Integrated Silicon Solution Inc, IS61LV6416-10TL Datasheet - Page 3

• Manufacturer Part Number: IS61LV6416-10TL
• Description: IC SRAM 1MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: Asynchronousr

Specifications of IS61LV6416-10TL

• Memory Size: 1M (64K x 16)
• Package / Case: 44-TSOP II
• Interface: Parallel
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 10 ns
• Supply Voltage (max): 3.63 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 120 mA
• Organization: 64 K x 16
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1039

IS61LV6416
IS61LV6416L
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
OPERATING RANGE
DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
Integrated Silicon Solution, Inc.
Rev. I
11/22/05
Symbol Parameter
V
T
P
I
OUT
Mode
Not Selected
Output Disabled
Read
Write
STG
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Range
Commercial
Industrial
Symbol
V
V
V
V
I
I
TERM
T
LO
LI
OH
IL
OL
IH
IL
(min.) = –2.0V for pulse width less than 10 ns.
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Ambient Temperature
WE
WE
WE
WE
WE
–40°C to +85°C
X
H
X
H
H
H
L
L
L
0°C to +70°C
(1)
CE
CE
CE
CE
CE
H
L
L
L
L
L
L
L
L
(1)
Test Conditions
V
V
GND ≤ V
GND ≤ V
OE
OE
OE
OE
OE
DD
DD
X
H
X
X
X
X
L
L
L
= Min., I
= Min., I
(Over Operating Range)
IN
OUT
–0.5 to V
LB
LB
LB
LB
LB
≤ V
–65 to +150
X
X
H
H
H
L
L
L
L
3.3V+10%,-5%
3.3V+10%,-5%
V
OH
OL
≤ V
Value
DD
DD
= 8.0 mA
1.5
= –4.0 mA
20
DD
(8,10 ns)
DD
, Outputs Disabled
UB
UB
UB
UB
UB
+0.5
X
X
H
H
H
L
L
L
L
Unit
mA
°C
W
V
I/O0-I/O7
High-Z
High-Z
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
IN
IN
3.3V ± 10%
3.3V ± 10%
V
DD
I/O PIN
(12 ns)
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
D
D
Min.
–0.3
D
D
2.4
–2
–2
—
OUT
OUT
2
IN
IN
V
DD
Max.
V
0.4
0.8
—
2
2
DD
I
+ 0.3
ISSI
SB
Current
1
I
I
I
CC
CC
CC
, I
SB
2
Unit
µA
µA
V
V
V
V
3
®
1
2
3
4
5
6
7
8
9
10
11
12