MT48H4M16LFB4-8 Micron Technology Inc, MT48H4M16LFB4-8 Datasheet - Page 32

• Manufacturer Part Number: MT48H4M16LFB4-8
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-8

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 13: AC Functional Characteristics
Notes: 5, 6, 7, 8, 9, 11; notes appear on page 34
Table 14: I
Notes: 1, 5, 6, 11, 13, 32; notes appear on page 34; V
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
PARAMETER/CONDITION
Operating Current: Active Mode;
Burst = 2; READ or WRITE;
Standby Current: Power-Down Mode; All banks idle; CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
Operating Current: Burst Mode; Continuous burst;
READ or WRITE; All banks active
Auto Refresh Current
CKE = HIGH; CS# = HIGH
DEEP POWER DOWN
PARAMETER
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or REFRESH
command
Data-out to high-impedance from PRECHARGE command
DD
Specifications and Conditions
t
RC =
t
RC (MIN)
t
RCD met;
t
t
RC =
RFC = 15.625µs
DD
t
= V
RFC (MIN)
DD
32
Q = +1.8V ±0.1V
CL = 3
CL = 2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
t
t
ROH(3)
ROH(2)
t
SYMBOL
t
t
t
t
t
t
CKED
t
t
DQM
DWD
t
t
t
t
MRD
DQD
DQZ
CCD
PED
DAL
BDL
CDL
RDL
DPL
I
I
I
I
I
I
DD1
DD 2
DD3
DD4
DD5
DD6
I
ZZ
-8
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
150
50
35
50
60
10
-8
2
MAX
MOBILE SDRAM
-10
©2003 Micron Technology, Inc. All rights reserved.
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
150
-10
50
30
50
50
10
2
64Mb: x16
UNITS
UNITS
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
mA
mA
mA
mA
mA
µA
µA
NOTES
NOTES
15, 21
16, 21
16, 21
18, 19,
3, 18,
3, 12,
3, 18,
3, 12,
17
14
14
17
17
17
17
17
17
26
17
17
19
32
19
19
33
34