MT48H4M16LFB4-8 Micron Technology Inc, MT48H4M16LFB4-8 Datasheet - Page 53

• Manufacturer Part Number: MT48H4M16LFB4-8
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-8

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the burst length = 4.
2. A9 and A11 = “Don’t Care.”
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
t
CKS
DQMU, DQML
AH
CH
AS
CL
COMMAND
A0-A9, A11
BA0, BA1
1
CLK
CKE
A10
DQ
MIN
2.5
9.6
2.5
1
3
3
8
1
t CMS
t CKS
t AS
t AS
t AS
-8
ACTIVE
T0
ROW
ROW
BANK
MAX
100
100
t CKH
t CMH
t AH
t AH
t AH
7
8
t RCD
t CK
MIN
2.5
9.6
2.5
12
1
3
3
1
T1
NOP
-10
Figure 49: WRITE – DQM Operation
MAX
100
100
DISABLE AUTO PRECHARGE
ENABLE AUTO PRECHARGE
7
8
t CMS
t CL
COLUMN m 2
t DS
UNITS
WRITE
T2
BANK
D
IN
t CMH
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t DH
m
t CH
T3
NOP
53
SYMBOL
t
t DS
t
WR (m)
WR (a)
t
D
t
t
t
CMH
t
CMS
RCD
T4
t
RAS
t
IN
t
NOP
DH
DS
RC
RP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
m + 2
t DH
1 CLK
t DS
MIN
+7ns
2.5
2.5
48
80
19
19
15
D
1
1
T5
IN
NOP
m + 3
t DH
-8
1
120,000
MAX
MOBILE SDRAM
NOP
T6
©2003 Micron Technology, Inc. All rights reserved.
1 CLK
+5ns
MIN
100
2.5
2.5
50
20
20
15
1
1
64Mb: x16
-10
NOP
DON’T CARE
120,000
T7
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
–