M93S66-WMN6P STMicroelectronics, M93S66-WMN6P Datasheet - Page 21

• Manufacturer Part Number: M93S66-WMN6P
• Description: IC EEPROM 4KBIT 2MHZ 8SOIC
• Manufacturer: STMicroelectronics

Specifications of M93S66-WMN6P

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 4K (256 x 16)
• Speed: 2MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Organization: 256 K x 16
• Interface Type: Microwire
• Maximum Clock Frequency: 2 MHz
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.5 V
• Maximum Operating Current: 2 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 2.5 V, 5.5 V
• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±2.5 μA
• Current, Operating: 2 mA
• Current, Output, Leakage: ±2.5
• Current, Supply: 1.5⁄2.0 mA
• Data Retention: >40 yrs.
• Density: 4K
• Package Type: SO8
• Temperature, Operating: -40 to +85 °C
• Temperature, Operating, Maximum: 85 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Address Setup: 50
• Time, Fall: 50 ns
• Time, Rise: 50 ns
• Voltage, Esd: 4000 V
• Voltage, Input, High: 3.5 to 6.5 V
• Voltage, Input, High Level: 0.7 V
• Voltage, Input, Low: 0.5 to 1.1 V
• Voltage, Input, Low Level: –0.45 V
• Voltage, Output, High: 6 to 13.2 V
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 2.5 to 5.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8598-5; M93S66-WMN6P

Table 14. DC Characteristics (M93Sx6-W, Device Grade 3)
Note: 1. New product: identified by Process Identification letter W or G.
Table 15. DC Characteristics (M93Sx6-R)
Note: 1. Preliminary Data: this product is under development. For more infomation, please contact your nearest ST sales office.
Symbol
Symbol
I
V
I
V
V
V
V
V
I
I
V
I
I
V
CC1
CC1
I
I
CC
CC
LO
LO
OH
OH
LI
OL
LI
OL
IH
IH
IL
IL
Supply Current (CMOS
Inputs)
Supply Current (Stand-by)
Supply Current (CMOS
Inputs)
Supply Current (Stand-by)
Input Leakage Current
Output Leakage Current
Input Low Voltage (D, C, S)
Input High Voltage (D, C, S)
Output Low Voltage (Q)
Output High Voltage (Q)
Input Leakage Current
Output Leakage Current
Input Low Voltage (D, C, S)
Input High Voltage (D, C, S)
Output Low Voltage (Q)
Output High Voltage (Q)
Parameter
Parameter
V
V
V
V
V
V
0V
CC
0V
CC
CC
CC
V
V
CC
CC
V
V
V
CC
CC
V
CC
CC
= 2.5V, S = V
= 1.8V, S = V
CC
= 2.5V, S = V
= 1.8V, S = V
CC
= 5V, S = V
= 5V, S = V
V
V
= 2.5V, I
= 1.8V, I
Test Condition
Test Condition
0V
0V
= 2.5V, I
= 1.8V, I
= 5V, I
OUT
OUT
= 5V, I
V
V
OH
IN
IN
V
V
OL
OH
OH
OL
OL
CC
CC
IH
IH
= –400µA
IH
IH
= 2.1mA
SS
SS
= –100µA
= –100µA
, Q in Hi-Z
, f = 2 MHz
, Q in Hi-Z
, f = 2 MHz
V
V
= 100µA
= 100µA
, f = 2 MHz
, f = 1 MHz
CC
CC
, C = V
, C = V
SS
SS
M93S66, M93S56, M93S46
V
V
0.7 V
0.8 V
Min
Min.
–0.45
CC
–0.45
CC
2.4
–0.2
–0.2
1
CC
CC
1
.
V
V
0.2 V
0.2 V
Max.
Max.
CC
CC
±2.5
±2.5
±2.5
±2.5
0.4
0.2
0.2
2
1
5
2
1
2
+ 1
+ 1
CC
CC
1
1
Unit
Unit
21/34
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V