M93S66-WMN6P STMicroelectronics, M93S66-WMN6P Datasheet - Page 24

• Manufacturer Part Number: M93S66-WMN6P
• Description: IC EEPROM 4KBIT 2MHZ 8SOIC
• Manufacturer: STMicroelectronics

Specifications of M93S66-WMN6P

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 4K (256 x 16)
• Speed: 2MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Organization: 256 K x 16
• Interface Type: Microwire
• Maximum Clock Frequency: 2 MHz
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.5 V
• Maximum Operating Current: 2 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 2.5 V, 5.5 V
• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±2.5 μA
• Current, Operating: 2 mA
• Current, Output, Leakage: ±2.5
• Current, Supply: 1.5⁄2.0 mA
• Data Retention: >40 yrs.
• Density: 4K
• Package Type: SO8
• Temperature, Operating: -40 to +85 °C
• Temperature, Operating, Maximum: 85 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Address Setup: 50
• Time, Fall: 50 ns
• Time, Rise: 50 ns
• Voltage, Esd: 4000 V
• Voltage, Input, High: 3.5 to 6.5 V
• Voltage, Input, High Level: 0.7 V
• Voltage, Input, Low: 0.5 to 1.1 V
• Voltage, Input, Low Level: –0.45 V
• Voltage, Output, High: 6 to 13.2 V
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 2.5 to 5.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8598-5; M93S66-WMN6P

M93S66, M93S56, M93S46
Table 18. AC Characteristics (M93Sx6-W, Device Grade 3)
Note: 1. t
24/34
Symbol
t
t
t
t
t
t
PRVCH
t
t
t
t
t
t
t
CLPRX
t
CHCL
CLCH
t
t
SLSH
t
WVCH
CHQV
SLWX
SLCH
SHCH
DVCH
CHDX
CLSH
SHQV
CHQL
SLQZ
CLSL
t
2. Chip Select Input (S) must be brought Low for a minimum of tSLSH between consecutive instruction cycles.
3. New product: identified by Process Identification letter W or G.
f
W
C
CHCL
2
1
1
+ t
CLCH
t
t
PRES
t
PREH
t
t
t
t
t
t
t
t
t
Alt.
t
t
t
CSH
f
PES
PEH
CSS
SKH
SKS
t
t
PD0
PD1
SKL
DIS
DIH
WP
SK
CS
SV
DF
1 / f
C
.
Clock Frequency
Protect Enable Valid to Clock High
Write Enable Valid to Clock High
Clock Low to Protect Enable Transition
Chip Select Low to Write Enable Transition
Chip Select Low to Clock High
Chip Select Set-up Time
Chip Select Low to Chip Select High
Clock High Time
Clock Low Time
Data In Set-up Time
Data In Hold Time
Clock Set-up Time (relative to S)
Chip Select Hold Time
Chip Select to Ready/Busy Status
Chip Select Low to Output Hi-Z
Delay to Output Low
Delay to Output Valid
Erase/Write Cycle time
Test conditions specified in
Parameter
Table 9.
and
Table 6.
Min.
D.C.
250
200
200
200
50
50
50
50
50
50
50
0
0
3
Max.
200
100
200
200
2
5
3
MHz
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns