NCP5318FTR2G ON Semiconductor, NCP5318FTR2G Datasheet - Page 7

• Manufacturer Part Number: NCP5318FTR2G
• Description: IC CTLR CPU 2/3/4 PHASE 32-LQFP
• Manufacturer: ON Semiconductor

Specifications of NCP5318FTR2G

• Applications: Controller, CPU
• Voltage - Input: 9.5 ~ 13.2 V
• Number Of Outputs: 4
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 32-LQFP
• Switching Frequency: 1 MHz
• Mounting Style: SMD/SMT
• Primary Input Voltage: 18V
• No. Of Pins: 32
• Operating Temperature Range: 0°C To +70°C
• Termination Type: SMD
• Supply Voltage Min: 12V
• Packaging Type: Tape And Reel
• Peak Reflow Compatible (260 C): Yes
• Frequency: 1MHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NCP5318FTR2G; NCP5318FTR2GOSTR

ELECTRICAL CHARACTERISTICS (continued)
C
VID Inputs
Power Good
Overvoltage Protection
Enable Input
Error Amplifier
PWM Comparators
MOSFET Driver Enable (DRVON)
2. Guaranteed by design, not tested in production.
SGND Bias Current
SGND Voltage Compliance Range
Upper Threshold Offset
Lower Threshold Ratio
Time to Assert PWRGD
Time to De−assert PWRGD
Output Low Voltage
OVP Threshold above VID
Start Threshold
Stop Threshold
Hysteresis
Input Pull−Up Voltage
Input Pull−Up Resistance
V
COMP Source Current
COMP Sink Current
Transconductance
Open Loop DC Gain
Unity Gain Bandwidth
PSRR @ 1.0 kHz
COMP Max Voltage
COMP Min Voltage
Minimum Pulse Width
Transient Response Time
Channel Startup Offset
Artificial Ramp Amplitude
Output High
Output Low
Pull−Down Resistance
SS
FB
= 0.1 mF, C
Bias Current
VCC
Characteristic
= 0.1 mF, R
ROSC
= 95.3 kW, V(I
SGND < 300 mV, All DAC Codes
Offset from the No Load Set Point Voltage
PWRLS Voltage / No Load Set Point Volt-
age
Delay from V
Delay from V
Low
Voltage with Open Collector Pin Sinking
4 mA
Gates switching, SS high
Gates not switching, SS low
1.0 MW to GND
COMP = 0.5 V to 2.0 V
C
V
V
Measured from CSxP to GATEx,
V
60 mV step between CSxP and CSxN;
Measure at GATEx = 1.0 V (Note 2)
Measured from CSxN to GATEx,
COMP = 2.1 V, CSxP = CSxN = 0.5 V,
CSxN stepped from 1.2 V to 2.0 V (Note 2)
CSxP = CSxN = V
when GATEx switch high
50% duty cycle
DRVON floating
I = 100 mA
DRVON = 1.5 V, ENABLE = 0 V,
R = 1.5 V/I(DRVON)
LIM
FB
FB
FB
COMP
) = 1.0 V, DAC Code 010100; unless otherwise noted)
= 0 V
= 1.6 V
= CSxN = 0.5, COMP = 0.5 V,
(0°C < T
http://onsemi.com
= 30 pF (Note 2)
OUT
OUT
Test Conditions
A
< 70°C; V
in Range to PWRGD High
out of Range to PWRGD
(Note 2)
(Note 2)
(Note 2)
7
FB
−
−
−
−
−
−
= 0, Measure Vcomp
CC
= 12 V; C
GATEx
= 100 pF, C
0.475
−200
0.35
Min
170
100
1.0
0.4
2.7
7.0
1.1
2.4
2.3
10
85
40
40
72
35
0
0
−
−
−
−
−
−
−
−
−
COMP
0.505
0.62
Typ
180
215
170
175
2.0
1.0
2.9
0.1
1.3
4.0
2.9
20
97
10
70
70
80
60
80
40
40
70
−
−
−
−
−
= 0.01 mF,
0.525
Max
0.75
300
400
250
100
100
150
100
140
115
4.0
4.0
0.8
3.3
1.0
1.5
0.2
40
20
60
−
−
−
−
−
−
−
−
mmho
MHz
Unit
V/V
mV
mV
mV
mV
mV
mV
mV
ms
kW
dB
dB
kW
mA
mA
mA
mA
ms
ns
ns
V
V
V
V
V
V
V