PESD5V0L1BA,115 NXP Semiconductors, PESD5V0L1BA,115 Datasheet - Page 5

• Manufacturer Part Number: PESD5V0L1BA,115
• Description: DIODE LOW ESD PROTECTION SOD323
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0L1BA,115

• Package / Case: SC-76, SOD-323, UMD2
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 7V
• Power (watts): 500W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 10 V
• Operating Voltage: 5 V
• Breakdown Voltage: 7.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 15 A
• Peak Pulse Power Dissipation: 500 W
• Capacitance: 75 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.35 mm W x 1.8 mm L x 1.1 mm H
• Number Of Elements: 1
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 7V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 1uA
• Peak Pulse Current: 15A
• Test Current (it): 5mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4049-2; 934058421115; PESD5V0L1BA T/R; PESD5V0L1BA T/R

NXP Semiconductors
6. Characteristics
Table 8.
T
PESDXL1BA_SER_2
Product data sheet
Symbol
V
I
V
C
V
RM
amb
RWM
(BR)
(CL)R
d
= 25 C unless otherwise specified
Characteristics
Parameter
reverse stand-off voltage
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
reverse leakage current
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
breakdown voltage
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
diode capacitance
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
clamping voltage
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
Conditions
see
V
V
V
V
V
I
V
see
I
I
I
I
I
I
I
I
I
I
R
pp
pp
pp
pp
pp
pp
pp
pp
pp
pp
RWM
RWM
RWM
RWM
RWM
R
= 5 mA
= 1 A
= 18 A
= 1 A
= 15 A
= 1 A
= 5A
= 1 A
= 5 A
= 1 A
= 3 A
= 0 V; f = 1 MHz;
Figure 7
Figure 5
Low capacitance bidirectional ESD protection diodes in SOD323
= 3.3 V
= 5.0 V
= 12 V
= 15 V
= 24 V
Rev. 02 — 20 August 2009
and
6
[1]
Min
-
-
-
-
-
-
-
-
-
-
5.8
7.0
14.2
17.1
25.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PESDxL1BA series
Typ
-
-
-
-
-
0.09
0.01
< 1
< 1
< 1
6.4
7.6
15.9
18.9
27.8
101
75
19
16
11
-
-
-
-
-
-
-
-
-
-
Max
3.3
5.0
12
15
24
2
1
50
50
50
6.9
8.2
16.7
20.3
30.3
-
-
-
-
-
8
26
10
33
20
37
25
44
40
70
© NXP B.V. 2009. All rights reserved.
Unit
V
V
V
V
V
nA
nA
nA
V
V
V
V
V
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
A
A
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