PESD5V0L1BA,115 NXP Semiconductors, PESD5V0L1BA,115 Datasheet - Page 8

• Manufacturer Part Number: PESD5V0L1BA,115
• Description: DIODE LOW ESD PROTECTION SOD323
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0L1BA,115

• Package / Case: SC-76, SOD-323, UMD2
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 7V
• Power (watts): 500W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 10 V
• Operating Voltage: 5 V
• Breakdown Voltage: 7.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 15 A
• Peak Pulse Power Dissipation: 500 W
• Capacitance: 75 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.35 mm W x 1.8 mm L x 1.1 mm H
• Number Of Elements: 1
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 7V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 1uA
• Peak Pulse Current: 15A
• Test Current (it): 5mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4049-2; 934058421115; PESD5V0L1BA T/R; PESD5V0L1BA T/R

NXP Semiconductors
PESDXL1BA_SER_2
Product data sheet
Fig 7.
(1) PESD3V3L1BA; PESD5V0L1BA
For PESD12VL1BA, PESD15VL1BA and PESD24VL1BA, I
Relative variation of reverse leakage current as a function of junction temperature; typical values
I
RM(25 C)
I
RM
10
10
1
1
100
Low capacitance bidirectional ESD protection diodes in SOD323
50
Rev. 02 — 20 August 2009
0
RM
50
< 20 nA at 150 C
100
006aaa069
T
j
( C)
PESDxL1BA series
(1)
150
© NXP B.V. 2009. All rights reserved.
8 of 15