PESD5V0S2BT,215 NXP Semiconductors, PESD5V0S2BT,215 Datasheet

DIODE BIDIR ESD PROTECT SOT23

PESD5V0S2BT,215

Manufacturer Part Number
PESD5V0S2BT,215
Description
DIODE BIDIR ESD PROTECT SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD5V0S2BT,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
5.5V
Power (watts)
130W
Polarization
2 Channel Array - Bidirectional
Mounting Type
Surface Mount
Polarity
Bidirectional
Clamping Voltage
14 V
Operating Voltage
5 V
Breakdown Voltage
9.5 V
Termination Style
SMD/SMT
Peak Surge Current
12 A
Peak Pulse Power Dissipation
130 W
Capacitance
35 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
1.4 (Max) mm W x 3 (Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4056-2
934058007215
PESD5V0S2BT T/R
PESD5V0S2BT T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to
protect two data lines from the damage caused by ESD and other transients.
I
I
I
I
I
I
I
I
I
I
I
I
I
Table 1.
T
Symbol
V
C
amb
RWM
d
PESD5V0S2BT
Low capacitance bidirectional double ESD protection diode
Rev. 03 — 9 February 2009
Bidirectional ESD protection of two lines
Low diode capacitance
Max. peak pulse power: P
Low clamping voltage: V
Ultra low leakage current: I
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
Cellular handsets and accessories
Portable electronics
Computers and peripherals
Communication systems
Audio and video equipment
= 25 C unless otherwise specified.
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
PP
CL
PP
RM
= 14 V at I
= 12 A at t
= 130 W at t
= 5 nA at V
Conditions
f = 1 MHz;
V
R
= 0 V
PP
p
= 8/20 s
= 12 A
p
RWM
= 8/20 s
= 5 V
Min
-
-
Typ
-
35
Product data sheet
Max
5
45
Unit
V
pF

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PESD5V0S2BT,215 Summary of contents

Page 1

PESD5V0S2BT Low capacitance bidirectional double ESD protection diode Rev. 03 — 9 February 2009 1. Product profile 1.1 General description Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PESD5V0S2BT - 4. Marking Table 4. Type number PESD5V0S2BT [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...

Page 3

... NXP Semiconductors Table 6. Symbol V ESD [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin pin Table 7. Standard IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) 120 100 % (%) Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 PESD5V0S2BT_3 Product data sheet Low capacitance bidirectional double ESD protection diode ...

Page 4

... NXP Semiconductors 6. Characteristics Table unless otherwise specified. amb Symbol Per diode V RWM dif C d [1] Non-repetitive current pulse 8/20 s exponential decay waveform. [2] Measured from pin pin ( amb t = 8/20 s exponential decay waveform p Fig 3. Peak pulse power dissipation as a function of pulse duration; typical values ...

Page 5

... NXP Semiconductors (pF MHz amb Fig 5. Diode capacitance as a function of reverse voltage; typical values PESD5V0S2BT_3 Product data sheet Low capacitance bidirectional double ESD protection diode 001aaa634 R( (V) R Fig 6. Rev. 03 — 9 February 2009 PESD5V0S2BT 100 125 I < measured amb Relative variation of reverse current as a function of junction temperature ...

Page 6

... NXP Semiconductors ESD TESTER IEC 61000-4-2 network C = 150 pF 330 Z Z GND unclamped 1 kV ESD voltage waveform (IEC61000-4-2 network) GND unclamped 1 kV ESD voltage waveform (IEC61000-4-2 network) Fig 7. ESD clamping test setup and waveforms PESD5V0S2BT_3 Product data sheet Low capacitance bidirectional double ESD protection diode ...

Page 7

... NXP Semiconductors 7. Application information The PESD5V0S2BT is designed for the bidirectional protection of two lines from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESD5V0S2BT may be used on lines where the signal polarities are both, positive and negative with respect to ground. The PESD5V0S2BT provides a surge capability of 130 W per line for an 8/20 s waveform ...

Page 8

... NXP Semiconductors 8. Package outline Fig 9. 9. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PESD5V0S2BT [1] For further information and the availability of packing methods, see PESD5V0S2BT_3 Product data sheet Low capacitance bidirectional double ESD protection diode 3 ...

Page 9

... NXP Semiconductors 10. Soldering 3 1.7 Fig 10. Reflow soldering footprint SOT23 (TO-236AB) 4.6 2.6 Fig 11. Wave soldering footprint SOT23 (TO-236AB) PESD5V0S2BT_3 Product data sheet Low capacitance bidirectional double ESD protection diode 3.3 2.9 1 2 1.4 2.8 4.5 Rev. 03 — 9 February 2009 ...

Page 10

... Document ID Release date PESD5V0S2BT_3 20090209 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Table voltage • Table • ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Application information Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 Legal information ...

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