PESD5V0S2BT,215 NXP Semiconductors, PESD5V0S2BT,215 Datasheet - Page 3

• Manufacturer Part Number: PESD5V0S2BT,215
• Description: DIODE BIDIR ESD PROTECT SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0S2BT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Power (watts): 130W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 14 V
• Operating Voltage: 5 V
• Breakdown Voltage: 9.5 V
• Termination Style: SMD/SMT
• Peak Surge Current: 12 A
• Peak Pulse Power Dissipation: 130 W
• Capacitance: 35 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.4 (Max) mm W x 3 (Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4056-2; 934058007215; PESD5V0S2BT T/R; PESD5V0S2BT T/R

NXP Semiconductors
PESD5V0S2BT_3
Product data sheet
Fig 1.
(%)
I
PP
120
80
40
0
0
8/20 s pulse waveform according to
IEC 61000-4-5
10
100 % I
Table 6.
[1]
[2]
Table 7.
Symbol
V
Standard
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
e
ESD
PP
t
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 3 or pin 2 to 3.
; 8 s
20
50 % I
Parameter
electrostatic discharge
voltage
ESD maximum ratings
ESD standards compliance
PP
30
; 20 s
001aaa630
t ( s)
Rev. 03 — 9 February 2009
40
Low capacitance bidirectional double ESD protection diode
Fig 2.
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883
(human body model)
100 %
10 %
90 %
ESD pulse waveform according to
IEC 61000-4-2
I
PP
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
t
r
30 ns
0.7 ns to 1 ns
PESD5V0S2BT
[1][2]
60 ns
Min
-
-
© NXP B.V. 2009. All rights reserved.
Max
30
10
001aaa631
Unit
kV
kV
t
3 of 12