PESD5V0S2BT,215 NXP Semiconductors, PESD5V0S2BT,215 Datasheet - Page 4

• Manufacturer Part Number: PESD5V0S2BT,215
• Description: DIODE BIDIR ESD PROTECT SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0S2BT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Power (watts): 130W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 14 V
• Operating Voltage: 5 V
• Breakdown Voltage: 9.5 V
• Termination Style: SMD/SMT
• Peak Surge Current: 12 A
• Peak Pulse Power Dissipation: 130 W
• Capacitance: 35 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.4 (Max) mm W x 3 (Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4056-2; 934058007215; PESD5V0S2BT T/R; PESD5V0S2BT T/R

NXP Semiconductors
6. Characteristics
PESD5V0S2BT_3
Product data sheet
Fig 3.
P
(W)
PP
10
10
10
3
2
1
T
t
Peak pulse power dissipation as a function of
pulse duration; typical values
p
amb
= 8/20 s exponential decay waveform
= 25 C
10
Table 8.
T
[1]
[2]
Symbol
Per diode
V
I
V
V
r
C
RM
amb
dif
RWM
CL
BR
d
Non-repetitive current pulse 8/20 s exponential decay waveform.
Measured from pin 1 to 3 or pin 2 to 3.
10
= 25 C unless otherwise specified.
2
Parameter
reverse standoff voltage
reverse leakage current
clamping voltage
breakdown voltage
differential resistance
diode capacitance
Electrical characteristics
10
3
001aaa632
t
p
( s)
Rev. 03 — 9 February 2009
10
4
Low capacitance bidirectional double ESD protection diode
Fig 4.
P
Conditions
V
I
I
I
I
f = 1 MHz; V
PP(25 C)
PP
PP
R
R
P
RWM
= 1 mA
= 1 mA
PP
= 1 A
= 12 A
1.2
0.8
0.4
0
= 5 V
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
R
= 0 V
50
PESD5V0S2BT
[1][2]
[1][2]
100
5.5
-
-
Min
-
-
-
-
150
Typ
-
5
-
-
-
-
35
© NXP B.V. 2009. All rights reserved.
001aaa633
T
j
( C)
Max
5
100
10
14
9.5
50
45
200
Unit
V
nA
V
V
V
pF
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