ATTINY25-20PU Atmel, ATTINY25-20PU Datasheet - Page 162
![IC AVR MCU 2K 20MHZ 8-DIP](/photos/6/50/65033/313-8-dip_sml.jpg)
ATTINY25-20PU
Manufacturer Part Number
ATTINY25-20PU
Description
IC AVR MCU 2K 20MHZ 8-DIP
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY25-20PU
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DIP (0.300", 7.62mm)
Processor Series
ATTINY2x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
USI
Maximum Clock Frequency
10 MHz
Number Of Programmable I/os
6
Number Of Timers
2
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
Data Rom Size
128 B
A/d Bit Size
10 bit
A/d Channels Available
4
Height
3.3 mm
Length
9.27 mm
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.7 V
Width
6.35 mm
For Use With
ATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIPATAVRBC100 - REF DESIGN KIT BATTERY CHARGER770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 20-5. High-voltage Serial Programming Waveforms
20.7.5
20.7.6
20.7.7
20.7.8
20.7.9
20.7.10
162
SDO
PB0
PB1
PB2
PB3
SDI
SCI
SII
ATtiny25/45/85
Programming the EEPROM
Reading the Flash
Reading the EEPROM
Programming and Reading the Fuse and Lock Bits
Reading the Signature Bytes and Calibration Byte
Power-off sequence
0
MSB
MSB
MSB
1
The EEPROM is organized in pages, see
EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM Data memory is as
follows (refer to
The algorithm for reading the Flash memory is as follows (refer to
The algorithm for reading the EEPROM memory is as follows (refer to
The algorithms for programming and reading the Fuse Low/High bits and Lock bits are shown in
Table
The algorithms for reading the Signature bytes and Calibration byte are shown in
Set SCI to “0”. Set RESET to “1”. Turn V
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Pro-
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
1. Load Command "Read Flash".
2. Read Flash Low and High Bytes. The contents at the selected address are available at
1. Load Command “Read EEPROM”.
2. Read EEPROM Byte. The contents at the selected address are available at serial out-
gramming” cycle to finish.
programmed.
serial output SDO.
put SDO.
20-16.
2
Table
3
20-16):
4
5
CC
6
power off.
Table 21-11 on page
7
LSB
LSB
LSB
8
175. When programming the
Table
9
Table
20-16):
10
20-16):
Table
2586M–AVR–07/10
20-16.
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