PIC18LF2320-I/SP Microchip Technology, PIC18LF2320-I/SP Datasheet - Page 79
![IC MCU FLASH 4KX16 EEPROM 28DIP](/photos/6/59/65908/150-28-dip_sml.jpg)
PIC18LF2320-I/SP
Manufacturer Part Number
PIC18LF2320-I/SP
Description
IC MCU FLASH 4KX16 EEPROM 28DIP
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC18F2220-ISO.pdf
(394 pages)
3.PIC18F2220-ISO.pdf
(6 pages)
4.PIC18F2220-ISO.pdf
(6 pages)
5.PIC18F2220-ISO.pdf
(8 pages)
6.PIC18F2220-ISO.pdf
(6 pages)
7.PIC18F2220-ISO.pdf
(6 pages)
Specifications of PIC18LF2320-I/SP
Core Size
8-Bit
Program Memory Size
8KB (4K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
25
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-DIP (0.300", 7.62mm)
Controller Family/series
PIC18
No. Of I/o's
25
Eeprom Memory Size
256Byte
Ram Memory Size
512Byte
Cpu Speed
40MHz
No. Of Timers
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- PIC16F616T-ISL PDF datasheet
- PIC18F2220-ISO PDF datasheet #2
- PIC18F2220-ISO PDF datasheet #3
- PIC18F2220-ISO PDF datasheet #4
- PIC18F2220-ISO PDF datasheet #5
- PIC18F2220-ISO PDF datasheet #6
- PIC18F2220-ISO PDF datasheet #7
- Current page: 79 of 394
- Download datasheet (7Mb)
6.5
The programming block size is 4 words or 8 bytes.
Word or byte programming is not supported.
Table writes are used internally to load the holding reg-
isters needed to program the Flash memory. There are
8 holding registers used by the table writes for
programming.
FIGURE 6-5:
6.5.1
The sequence of events for programming an internal
program memory location should be:
1.
2.
3.
4.
5.
6.
7.
© 2007 Microchip Technology Inc.
TBLPTR = xxxxx0
Read 64 bytes into RAM.
Update data values in RAM as necessary.
Load Table Pointer with address being erased.
Do the row erase procedure (see Section 6.4.1
“Flash Program Memory Erase Sequence”).
Load Table Pointer with address of first byte
being written.
Write the first 8 bytes into the holding registers
with auto-increment.
Set the EECON1 register for the write operation:
• set EEPGD bit to point to program
• clear the CFGS bit to access program
• set WREN bit to enable byte writes.
memory;
memory;
Writing to Flash Program Memory
FLASH PROGRAM MEMORY WRITE
SEQUENCE
Holding Register
8
TABLE WRITES TO FLASH PROGRAM MEMORY
TBLPTR = xxxxx1
Holding Register
PIC18F2220/2320/4220/4320
8
Program Memory
Write Register
TBLPTR = xxxxx2
TABLAT
Since the Table Latch (TABLAT) is only a single byte,
the TBLWT instruction has to be executed 8 times for
each programming operation. All of the table write
operations will essentially be short writes because only
the holding registers are written. At the end of updating
8 registers, the EECON1 register must be written to, to
start the programming operation with a long write.
The long write is necessary for programming the inter-
nal Flash. Instruction execution is halted while in a long
write cycle. The long write will be terminated by the
internal programming timer.
8.
9.
10. Write AAh to EECON2.
11. Set the WR bit. This will begin the write cycle.
12. The CPU will stall for duration of the write (about
13. Execute a NOP.
14. Re-enable interrupts.
15. Repeat steps 6-14 seven times, to write 64
16. Verify the memory (table read).
This procedure will require about 18 ms to update one
row of 64 bytes of memory. An example of the required
code is given in Example 6-3.
Holding Register
Disable interrupts.
Write 55h to EECON2.
2 ms using internal timer).
bytes.
8
TBLPTR = xxxxx7
Holding Register
DS39599G-page 77
8
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