C8051F338-GM Silicon Laboratories Inc, C8051F338-GM Datasheet - Page 33
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C8051F338-GM
Manufacturer Part Number
C8051F338-GM
Description
IC MCU 16K FLASH 24QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F33xr
Specifications of C8051F338-GM
Program Memory Type
FLASH
Program Memory Size
16KB (16K x 8)
Package / Case
24-QFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
POR, PWM, Temp Sensor, WDT
Number Of I /o
21
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 1x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
I2C/SMBus/SPI/UART
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
21
Number Of Timers
4
Operating Supply Voltage
2.7 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F336DK
Minimum Operating Temperature
- 40 C
On-chip Adc
16-ch x 10-bit
On-chip Dac
1-ch x 10-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1427-5
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- Download datasheet (2Mb)
Table 6.9. Temperature Sensor Electrical Characteristics
V
Table 6.10. Voltage Reference Electrical Characteristics
V
Parameter
Linearity
Slope
Slope Error*
Offset
Offset Error*
Note: Represents one standard deviation from the mean.
Parameter
Internal Reference (REFBE = 1)
Output Voltage
VREF Short-Circuit Current
VREF Temperature
Coefficient
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
Power Supply Rejection
External Reference (REFBE = 0)
Input Voltage Range
Input Current
Power Specifications
Reference Bias Generator
DD
DD
= 3.0 V,
= 3.0 V; –40 to +85 °C unless otherwise specified.
–
40 to +85 °C unless otherwise specified.
Conditions
25 °C ambient
Load = 0 to 200 µA to AGND
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
Sample Rate = 200 ksps; VREF = 3.0 V
REFBE = ‘1’ or TEMPE = ‘1’
Conditions
Temp = 0 °C
Temp = 0 °C
Rev.1.0
Min
—
—
—
—
—
C8051F336/7/8/9
2.35
Min
—
—
—
—
—
—
—
—
0
± 0.2
2.25
11.6
Typ
785
23
2.42
–0.6
Typ
200
7.5
—
30
30
—
3
3
Max
—
—
—
—
—
Max
2.50
V
10
50
—
—
—
—
—
—
DD
mV/°C
µV/°C
ppm/°C
Units
µV/µA
Units
mV/V
mV
mV
°C
mA
ms
µA
µA
µs
V
V
33
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