ST72F32AK2T6 STMicroelectronics, ST72F32AK2T6 Datasheet - Page 128

• Manufacturer Part Number: ST72F32AK2T6
• Description: MCU 8BIT 8KB FLASH/ROM 32-TQFP
• Manufacturer: STMicroelectronics
• Series: ST7r

Specifications of ST72F32AK2T6

• Core Processor: ST7
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 24
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 3.8 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TQFP, 32-VQFP
• Processor Series: ST72F3x
• Core: ST7
• Data Bus Width: 8 bit
• Data Ram Size: 384 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 32
• Number Of Timers: 3
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: ST7232X-EVAL, ST7MDT20-DVP3, ST7MDT20J-EMU3, STX-RLINK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• A/d Bit Size: 10 bit
• A/d Channels Available: 12
• Height: 1.4 mm
• Length: 7 mm
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 3.8 V
• Width: 7 mm
• For Use With: 497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-5610

ST7232A
12.8 I/O PORT PIN CHARACTERISTICS
12.8.1 General Characteristics
Subject to general operating conditions for V
Notes:
1. Data based on characterization results, not tested in production.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
3. When the current limitation is not possible, the V
tion. A positive injection is induced by V
on page 114
4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for
example and leaving the I/O unconnected on the board or an external pull-up or pull-down resistor (see
peak current value taken at a fixed V
production. This value depends on V
5. The R
scribed in
6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external
interrupt source.
Figure 66. Unused I/O Pins configured as input
128/157
1
ΣI
I
Symbol
INJ(PIN)
t
t
INJ(PIN)
Note: I/O can be left unconnected if it is configured as output
(0 or 1) by the software. This has the advantage of
t
greater EMC robustness and lower cost.
f(IO)out
r(IO)out
w(IT)in
V
R
C
V
V
I
lkg
I
hys
PU
S
IH
IO
IL
3)
PU
3)
Figure
pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics de-
Input low level voltage (standard voltage
devices)
Input high level voltage
Schmitt trigger voltage hysteresis
Injected Current on Flash device pin PB0
Injected Current on other I/O pins
Total injected current (sum of all I/O and
control pins)
Input leakage current
Static current consumption induced by each
floating input pin
Weak pull-up equivalent resistor
I/O pin capacitance
Output high to low level fall time
Output low to high level rise time
External interrupt pulse time
for more details.
67).
1)
V
DD
10kΩ
10kΩ
Parameter
UNUSED I/O PORT
UNUSED I/O PORT
1)
DD
IN
IN
value, based on design simulation and technology characteristics, not tested in
and temperature values.
6)
>V
ST7XXX
ST7XXX
DD
1)
5)
1)
2)
while a negative injection is induced by V
IN
DD
maximum must be respected, otherwise refer to I
, f
OSC
V
V
Floating input mode
V
C
Between 10% and
90%
DD
SS
IN
L
=50pF
=
, and T
=5V
Conditions
≤
V
Figure 67. Typical I
SS
V
IN
≤
V
A
V
DD
unless otherwise specified.
DD
90
80
70
60
50
40
30
20
10
0
=5V
2
4)
2.5
0.7xV
Ta=1 40°C
Ta=9 5°C
Ta=2 5°C
Ta=-45 °C
3
Min
50
0
1
3.5
PU
DD
Vdd(V)
IN
vs. V
<V
4
SS
Typ
200
120
4.5
0.7
25
25
5
. Refer to
DD
5
with V
5.5
0.3xV
INJ(PIN)
Figure
Max
±25
250
+4
±4
±1
Section 12.2.2
6
IN
DD
=V
66). Static
specifica-
SS
Unit
t
mA
CPU
kΩ
µA
pF
ns
V
V