C8051T635-GM Silicon Laboratories Inc, C8051T635-GM Datasheet - Page 29

• Manufacturer Part Number: C8051T635-GM
• Description: IC MCU 2KB 20PIN QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051T63xr

Specifications of C8051T635-GM

• Program Memory Type: OTP
• Program Memory Size: 2KB (2K x 8)
• Package / Case: 20-QFN
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 17
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: C8051T6x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 768 B
• Interface Type: I2C/SPI/UART
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 17
• Number Of Timers: 4
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051T630DK
• Minimum Operating Temperature: - 40 C
• Package: 20QFN EP
• Device Core: 8051
• Family Name: C8051T63x
• Maximum Speed: 25 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 336-1464 - KIT DEV FOR C8051T630 FAMILY
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1463-5

Table 5.10. Temperature Sensor Electrical Characteristics
V
Table 5.11. Voltage Reference Electrical Characteristics
V
Parameter
Linearity
Slope
Slope Error*
Offset
Offset Error*
Note: Represents one standard deviation from the mean.
Parameter
On-Chip Reference (REFBE = 1)
Output Voltage
VREF Short-Circuit Current
VREF Temperature 
Coefficient
Load Regulation
VREF Turn-On Time 
(1.2 V setting)
VREF Turn-On Time 
(2.4 V setting)
Power Supply Rejection
External Reference (REFBE = 0)
Input Voltage Range
Input Current
Power Specifications
Reference Bias Generator
DD
DD
= 3.0 V,
= 3.0 V; –40 to +85 °C unless otherwise specified.
–
40 to +85 °C unless otherwise specified.
1.2 V Setting, 25 °C ambient
2.4 V Setting 25 °C ambient
Load = 0 to 200 µA to GND, 1.2 V setting
Load = 0 to 200 µA to GND, 2.4 V setting
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
1.2 V setting
2.4 V setting
Sample Rate = 500 ksps; VREF = 2.5 V
REFBE = 1, 2.4 V setting
Temp = 0 °C
Temp = 0 °C
Conditions
Conditions
Rev. 1.0
C8051T630/1/2/3/4/5
Min
—
—
—
—
—
1.195
Min
2.3
—
—
—
—
—
—
—
—
—
—
—
—
0
±0.5
3.49
Typ
±40
930
±12
2.35
Typ
±15
120
360
4.5
3.7
1.2
4.3
1.2
5.0
25
90
12
75
—
Max
1.205
—
—
—
—
—
Max
V
100
2.4
—
—
—
—
—
—
—
—
—
—
6
DD
mV/°C
µV/°C
Units
ppm/°C
µV/µA
µV/µA
mV
mV
Units
µV/V
µV/V
°C
mA
ms
ms
µA
µA
µs
µs
V
V
V
29