MCF5211CAE66 Freescale Semiconductor, MCF5211CAE66 Datasheet - Page 30

• Manufacturer Part Number: MCF5211CAE66
• Description: IC MCU 128K FLASH 66MHZ 64-LQFP
• Manufacturer: Freescale Semiconductor
• Series: MCF521xr

Specifications of MCF5211CAE66

• Core Processor: Coldfire V2
• Core Size: 32-Bit
• Speed: 66MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 33
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Processor Series: MCF521x
• Core: ColdFire V2
• Data Bus Width: 32 bit
• Data Ram Size: 16 KB
• Interface Type: I2C/QSPI/UART
• Maximum Clock Frequency: 66 MHz
• Number Of Programmable I/os: 56
• Number Of Timers: 10
• Operating Supply Voltage: 3 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JLINK-CF-BDM26, EWCF
• Development Tools By Supplier: M52210DEMO, M52211EVB
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 12-bit
• Package: 64LQFP
• Device Core: ColdFire
• Family Name: MCF521x
• Maximum Speed: 66 MHz
• For Use With: M5211DEMO - KIT DEMO FOR MCF5211
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics
2.4
The flash memory characteristics are shown in
30
1
2
System clock (read only)
System clock (program/erase)
The average chip-junction temperature (T
Where:
For most applications P
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring P
for a known T
any value of T
Refer to the flash memory section for more information
Depending on packaging; see the orderable part number summary.
1
2
Maximum number of guaranteed program/erase cycles
Data retention at average operating temperature of 85°C
A program/erase cycle is defined as switching the bits from 1 → 0 → 1.
Reprogramming of a flash memory array block prior to erase is not required.
Flash Memory Characteristics
T
Θ
P
P
P
A
D
INT
I/O
JA
A
A
. Using this value of K, the values of P
.
Parameter
= ambient temperature, °C
= package thermal resistance, junction-to-ambient, °C/W
= P
= chip internal power, I
= power dissipation on input and output pins — user determined, watts
I/O
INT
< P
Table 24. SGFM Flash Program and Erase Characteristics
+ P
INT
K = P
2
Table 25. SGFM Flash Module Life Characteristics
I/O
and can be ignored. An approximate relationship between P
Parameter
D
× (T
MCF5213 ColdFire Microcontroller, Rev. 4
J
A
) in °C can be obtained from:
+ 273 °C) + Θ
P
DD
T
Table 24
D
J
× V
=
=
K
T
DD
(V
(V
A
D
÷
DD
DD
+
, watts
and T
Symbol
(
f
and
sys(P/E)
f
T
(
sys(R)
P
J
JMA
= 3.0 to 3.6 V)
= 3.0 to 3.6 V)
1
+
D
Table
before failure
J
273°C
×
can be obtained by solving equations (1) and (2) iteratively for
× P
Θ
JMA
D
25.
)
2
)
(1)
(2)
(3)
0.15
Min
0
Retention
Symbol
P/E
Typ
—
—
D
and T
66.67 or 80
66.67 or 80
10,000
J
Freescale Semiconductor
Value
(if P
10
Max
I/O
2
D
is neglected) is:
(at equilibrium)
1
1
Cycles
Years
Unit
MHz
MHz
Unit