M30879FLFP#U3 Renesas Electronics America, M30879FLFP#U3 Datasheet - Page 89

IC M32C/87 MCU FLASH 100QFP

M30879FLFP#U3

Manufacturer Part Number
M30879FLFP#U3
Description
IC M32C/87 MCU FLASH 100QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M32C/80r
Datasheets

Specifications of M30879FLFP#U3

Core Processor
M32C/80
Core Size
16/32-Bit
Speed
32MHz
Connectivity
CAN, EBI/EMI, I²C, IEBus, IrDA, SIO, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
85
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-QFP
For Use With
R0K330879S001BE - KIT DEV RSK M32C/87R0K330879S000BE - KIT DEV RSK M32C/87
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M30879FLFP#U3
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
M30879FLFP#U3M30879FLFP#U5
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Rev.
REVISION HISTORY
1.01
Aug. 29, 05
Date
Page
57
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62
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65
66
69
70
71
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73
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29
29
49
Electrical Characteristics
• Table 5.22 Memory Expansion Mode and Microprocessor Mode
• Table 5.23 Memory Expansion Mode and Microprocessor Mode
• Figure 5.3 Vcc1=Vcc2=5V Timing Diagram (1)
• Figure 5.4 Vcc1=Vcc2=5V Timing Diagram (2)
• Figure 5.5 Vcc1=Vcc2=5V Timing Diagram (3) NMI input diagram added
• Table 5.24 Electrical Characteristics V
• Table 5.25 A/D Conversion Characteristics
• Table 5.28 Memory Expansion Mode and Microprocessor Mode
• Table 5.40 Memory Expansion Mode and Microprocessor Mode
• Table 5.41 Memory Expansion Mode and Microprocessor Mode
• Figure 5.7 Vcc1=Vcc2=3.3V Timing Diagram (1) th
• Figure 5.8 Vcc1=Vcc2=3.3V Timing Diagram (2) tac
• Figure 5.9 Vcc1=Vcc2=3.3V Timing Diagram (3) NMI input diagram
Overview
• Tables 1.6 Pin Description Intelligent I/O functions modified
Special Function Register (SFR)
• The G1BCR0 register Value after reset modified
• The G1BCR1 register Value after reset modified
Electrical Characteristics
• Table 5.3 Electrical Characteristics I
DB)
DB)
modified
on note 2 modified;
tcyc expression added
DB)
and 2 modified;
added
Icc values modified
tac1(RD-DB)
note 1 added
th
expression on note 1 modified
th
expression on note 1 modified; th
CS) and
modified; th
tcyc expression added
tac
notes 1 and 2 modified; td
on note 2 modified; tcyc expression added
added
(BCLK-AD),
(BCLK-AD),
1(AD-DB)
expression on note 1 modified
expression on note 1 modified;
expressions on note 1 modified;
th
(BCLK-RD)
(WR-DB)
expression on note 1 modified;
expressions on note 1 modified; th
th
th
(BCLK-CS) and
(BCLK-CS) and
td(DB-WR)
M32C/87 Group Datasheet
A - 2
th(WR-DB)
, th
values modified; tac
(WR-AD) and
Description
(WR-AD)
expression on note 2 modified; tcyc expression
th
th
and
Summary
(BCLK-RD)
(BCLK-RD)
(ALE-AD)
, td
tw(ER)
tw
th(ALE-AD)
th(ALE-AD)
(DB-WR) and
(WR)
CC
OH
1(AD-DB)
expressions on note 3 modified;
standard value modified
values modified; th
values modified; th
expression on note 4 modified
expression on note 3 modified;
values changed ; R
tac2(RD-DB)
tCONV
expression on note 4
(ALE-AD)
expressions on notes 1
tac1(RD-DB)
tac2(RD-DB) and tac2(AD-
th
expression on note 2
(WR-DB)
(BCLK-AD),
value modified
2(RD-DB) and
expression on
expressions on
expressions
expression
(WR-AD)
(WR-AD)
PULLUP
th
(BCLK-
th(WR-
th(WR-
and

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