M30845FJGP#U3 Renesas Electronics America, M30845FJGP#U3 Datasheet - Page 71

IC M32C MCU FLASH 512K 144LQFP

M30845FJGP#U3

Manufacturer Part Number
M30845FJGP#U3
Description
IC M32C MCU FLASH 512K 144LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M32C/80r
Datasheets

Specifications of M30845FJGP#U3

Core Processor
M32C/80
Core Size
16/32-Bit
Speed
32MHz
Connectivity
CAN, I²C, IEBus, SIO, UART/USART
Peripherals
DMA, PWM, WDT
Number Of I /o
121
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 34x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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R
M
e
3
. v
Figure 5.8 V
2
1
C
2 .
8 /
Memory Expansion Mode and Microprocessor Mode
(when accessing external memory space and using the multiplexed bus)
1
4
[ Read Timing ]
[ Write Timing ]
J
CSi
ADi
/DBi
ADi
BHE
RD
CSi
ADi
/DBi
ADi
BHE
WR,WRL,
WRH
BCLK
ALE
BCLK
ALE
G
NOTES:
u
NOTES:
o r
. l
1. Varies with operation frequency:
2. Varies with operation frequency:
0
u
, 8
t
t
t
t
t
p
d(AD-ALE)
h(ALE-AD)
h(RD-AD)
ac2(RD-DB)
ac2(AD-DB)
t
(if external bus cycle is a + b , n=a)
t
(if external bus cycle is a + b , n=a)
t
t
t
(if external bus cycle is a + b , m=(b x 2)-1)
d(AD-ALE)
h(ALE-AD)
h(WR-AD)
h(WR-CS)
d(DB-WR)
CC1
2
(
M
0
0
3
18ns.max
t
=V
5
d(BCLK-ALE)
t
2
18ns.max
d(BCLK-ALE)
=(tcyc/2-10)ns.min, t
=(tcyc/2 x n-20)ns.min (if external bus cycle is a + b , n=a)
=(tcyc/2 x n-10)ns.min (if external bus cycle is a + b , n=a)
C
=(tcyc/2-10)ns.min,
=(tcyc/2-10)ns.min, t
=(tcyc/2 x m-25)ns.min
=(tcyc/2 x p-35)ns.max (if external bus cycle is a + b , p={(a+b-1) x 2}+1)
=(tcyc/2 x m-35)ns.max (if external bus cycle is a + b , m=(b x 2)-1)
=(tcyc/2 x n - 20)ns.min
=(tcyc/2 x n -10)ns.min
t
CC2
d(BCLK-CS)
18ns.max
t
8 /
t
t
Page 69
18ns.max
18ns.max
d(BCLK-AD)
d(BCLK-CS)
18ns.max
d(BCLK-AD)
t
(2 +2 Bus Cycles)
t
, 4
(2 +2 Bus Cycles)
d(AD-ALE)
d(AD-ALE)
=3.3V Timing Diagram (2)
t
ac2(AD-DB)
M
3
2
C
(1)
f o
(2)
8 /
8
(1)
4
5
h(RD-CS)
Address
) T
Address
h(WR-DB)
t
h(BCLK-ALE)
t
h(BCLK-ALE)
-2ns.min
-2ns.min
=(tcyc/2-10)ns.min
t
h(ALE-AD)
=(tcyc/2-20)ns.min
t
h(ALE-AD)
(2)
(1)
t
t
d(BCLK-WR)
d(BCLK-RD)
18ns.max
t
dz(RD-AD)
18ns.max
8ns.max
t
ac2(RD-DB)
tcyc
tcyc
t
d(DB-WR)
tcyc=
Measurement Conditions:
• V
• Input high and low voltage:
• Output high and low voltage:
(1)
t
t
su(DB-BCLK)
h(BCLK-WR)
CC
f
t
Data output
(BCLK)
h(BCLK-RD)
-3ns.min
(2)
0ns.min
1
V
V
10
=V
IH
OH
9
5. Electrical Characteristics (M32C/84)
=1.5V, V
Data input
CC
=1.5V, V
t
2
h(WR-CS)
=3.0 to 3.6V
30ns.min
t
0ns.min
h(RD-DB)
t
IL
h(RD-CS)
t
OL
=0.5V
t
h(WR-DB)
t
h(WR-AD)
h(RD-AD)
=1.5V
Vcc
(2)
1
(1)
=Vcc
(2)
t
h(BCLK-AD)
(1)
(2)
t
0ns.min
t
t
h(BCLK-CS)
0ns.min
Address
0ns.min
h(BCLK-CS)
h(BCLK-AD)
0ns.min
Address
2
=3.3V