ATTINY13-20SSQ Atmel, ATTINY13-20SSQ Datasheet - Page 97
![MCU AVR 1KB FLASH 20MHZ 8SOIC GW](/photos/6/50/65032/453-8-soic_sml.jpg)
ATTINY13-20SSQ
Manufacturer Part Number
ATTINY13-20SSQ
Description
MCU AVR 1KB FLASH 20MHZ 8SOIC GW
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY13-20SSQ
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
1KB (512 x 16)
Program Memory Type
FLASH
Eeprom Size
64 x 8
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Processor Series
ATTINY1x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
64 B
Interface Type
SPI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
6
Number Of Timers
1
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAKSTK511
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
For Use With
ATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Connectivity
-
Lead Free Status / Rohs Status
Details
16. Self-Programming the Flash
16.1
16.2
2535J–AVR–08/10
Performing Page Erase by SPM
Filling the Temporary Buffer (Page Loading)
The device provides a Self-Programming mechanism for downloading and uploading program
code by the MCU itself. The Self-Programming can use any available data interface and associ-
ated protocol to read code and write (program) that code into the Program memory. The SPM
instruction is disabled by default but it can be enabled by programming the SELFPRGEN fuse
(to “0”).
The Program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page buf-
fer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
Alternative 1, fill the buffer before a Page Erase
Alternative 2, fill the buffer after Page Erase
If only a part of the page needs to be changed, the rest of the page must be stored (for example
in the temporary page buffer) before the erase, and then be re-written. When using alternative 1,
the Boot Loader provides an effective Read-Modify-Write feature which allows the user software
to first read the page, do the necessary changes, and then write back the modified data. If alter-
native 2 is used, it is not possible to read the old data while loading since the page is already
erased. The temporary page buffer can be accessed in a random sequence. It is essential that
the page address used in both the Page Erase and Page Write operation is addressing the
same page.
To execute Page Erase, set up the address in the Z-pointer, write “00000011” to SPMCSR and
execute SPM within four clock cycles after writing SPMCSR. The data in R1 and R0 is ignored.
The page address must be written to PCPAGE in the Z-register. Other bits in the Z-pointer will
be ignored during this operation.
Note:
To write an instruction word, set up the address in the Z-pointer and data in R1:R0, write
“00000001” to SPMCSR and execute SPM within four clock cycles after writing SPMCSR. The
content of PCWORD in the Z-register is used to address the data in the temporary buffer. The
temporary buffer will auto-erase after a Page Write operation or by writing the CTPB bit in
SPMCSR. It is also erased after a system reset. Note that it is not possible to write more than
one time to each address without erasing the temporary buffer.
• Fill temporary page buffer
• Perform a Page Erase
• Perform a Page Write
• Perform a Page Erase
• Fill temporary page buffer
• Perform a Page Write
The CPU is halted during the Page Erase operation.
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