ATA6613P-PLQW Atmel, ATA6613P-PLQW Datasheet - Page 44
![MCU W/LIN TXRX REG WTCHDG 48-QFN](/photos/6/82/68297/48-qfn_sml.jpg)
ATA6613P-PLQW
Manufacturer Part Number
ATA6613P-PLQW
Description
MCU W/LIN TXRX REG WTCHDG 48-QFN
Manufacturer
Atmel
Series
AVR® ATA66 LIN-SBCr
Datasheet
1.ATA6612-EK.pdf
(364 pages)
Specifications of ATA6613P-PLQW
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
23
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
48-QFN Exposed Pad
Processor Series
ATA6x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
23
Number Of Timers
3
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATA6613P-PLQW
Manufacturer:
ATMEL
Quantity:
5 000
Part Number:
ATA6613P-PLQW
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
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6.5.2.1
6.5.3
6.5.3.1
44
Atmel ATA6612/ATA6613
EEPROM Data Memory
Data Memory Access Times
EEPROM Read/Write Access
This section describes the general access timing concepts for internal memory access. The
internal data SRAM access is performed in two clk
Figure 6-10. On-chip Data SRAM Access Cycles
The Atmel
as a separate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register.
The section
Programming in SPI or Parallel Programming mode.
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in
tion, however, lets the user software detect when the next byte can be written. If the user code
contains instructions that write the EEPROM, some precautions must be taken. In heavily fil-
tered power supplies, V
device for some period of time to run at a voltage lower than specified as minimum for the
clock frequency used. See
avoid problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction
is executed. When the EEPROM is written, the CPU is halted for two clock cycles before the
next instruction is executed.
®
Address
ATA6612/ATA6613 contains 512 bytes of data EEPROM memory. It is organized
“Memory Programming” on page 300
clk
Data
Data
WR
RD
CPU
CC
Compute Address
“Preventing EEPROM Corruption” on page 49
is likely to rise or fall slowly on power-up/down. This causes the
T1
Memory Access Instruction
Address valid
contains a detailed description on EEPROM
CPU
T2
Table 6-3 on page
cycles as described in
Next Instruction
T3
47. A self-timing func-
for details on how to
Figure
9111H–AUTO–01/11
6-10.
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