PIC18F47J53T-I/ML Microchip Technology, PIC18F47J53T-I/ML Datasheet - Page 529

• Manufacturer Part Number: PIC18F47J53T-I/ML
• Description: IC MCU 8BIT 128KB FLASH 44 QFN
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 18Fr

Specifications of PIC18F47J53T-I/ML

• Program Memory Type: FLASH
• Program Memory Size: 128KB (64K x 16)
• Package / Case: *
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 48MHz
• Connectivity: I²C, LIN, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 34
• Ram Size: 3.8K x 8
• Voltage - Supply (vcc/vdd): 2.15 V ~ 3.6 V
• Data Converters: A/D 13x10b/12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC18F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 3.8 KB
• Interface Type: I2C, SPI, USART
• Maximum Clock Frequency: 48 MHz
• Number Of Programmable I/os: 22
• Number Of Timers: 8
• Operating Supply Voltage: 2.15 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: MA180029 - BOARD DEMO PIC18F47J53 FS USB
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TABLE 31-1:
TABLE 31-2:
TABLE 31-3:
 2010 Microchip Technology Inc.
DC CHARACTERISTICS
D130
D131
D132B V
D133A T
D133B T
D134
D135
Operating Conditions: 3.0V < V
D300
D301
D302
300
301
Note 1:
Operating Conditions: 3.0V < V
D310
D311
D312
310
Note 1:
Param
Param
No.
Param
No.
No.
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
I
DDP
Sym
IW
IE
RETD
P
PR
PEW
only and are not tested.
Response time measured with one comparator input at V
V
Settling time measured while CVRR = 1 and CVR<3:0> bits transition from ‘0000’ to ‘1111’.
V
VR
VR
T
DD
V
V
V
CMRR
T
T
SET
RES
RESP
MC
IOFF
ICM
IRV
Sym
.
AA
UR
Sym
Program Flash Memory
Cell Endurance
V
V
Write
Self-Timed Write Cycle Time
Self-Timed Block Erase Cycle
Time
Characteristic Retention
Supply Current during
Programming
2
MEMORY PROGRAMMING REQUIREMENTS
COMPARATOR SPECIFICATIONS
VOLTAGE REFERENCE SPECIFICATIONS
OV
DD
DDCORE
core for Read
Resolution
Absolute Accuracy
Unit Resistor Value (R)
Settling Time
Input Offset Voltage
Input Common Mode Voltage
Internal Reference Voltage
Common Mode Rejection Ratio
Response Time
Comparator Mode Change to
Output Valid
Characteristic
for Self-Timed Erase or
Characteristics
Characteristics
DD
DD
(1)
< 3.6V, -40°C < T
< 3.6V, -40°C < T
(1)
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
V
2.25
10K
Min
A
A
20
—
—
—
MIN
V
< +85°C (unless otherwise stated)
< +85°C (unless otherwise stated)
DD
Min
—
—
—
/24
0.57
PIC18F47J53 FAMILY
Min
55
—
—
—
Typ†
0
33.0
2.8
—
—
—
—
3
Typ
—
—
2k
—
DD
/2, while the other input transitions from V
0.60
Typ
150
+5
—
—
—
Max
2.75
2.75
V
—
—
—
—
—
Max
DD
1/2
10
—
/32
Units
Year Provided no other
E/W -40C to +85C
mA
ms
ms
Max
0.63
V
+25
400
V
V
—
10
Units
DD
LSb
LSb
A
s

 +85°C for industrial
V
voltage
64 bytes
specifications are violated
MIN
Units
= Minimum operating
mV
dB
ns
s
V
V
Conditions
Comments
DS39964B-page 529
Comments
SS
to