PIC18F2410-I/SO Microchip Technology, PIC18F2410-I/SO Datasheet - Page 326

• Manufacturer Part Number: PIC18F2410-I/SO
• Description: IC MCU FLASH 8KX16 28SOIC
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18F2410-I/SO

• Program Memory Type: FLASH
• Program Memory Size: 16KB (8K x 16)
• Package / Case: 28-SOIC (7.5mm Width)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
• Number Of I /o: 25
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC18F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 768 B
• Interface Type: CCP, ECCP, EUSART, I2C, MSSP, SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 25
• Number Of Timers: 1 x 8
• Operating Supply Voltage: 4.2 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit
• Package: 28SOIC W
• Device Core: PIC
• Family Name: PIC18
• Maximum Speed: 40 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT28SO-1 - SOCKET TRANSITION 28SOIC 300MIL
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC18F2X1X/4X1X
TABLE 25-1:
DS39636D-page 328
DC Characteristics
D110
D113
D130
D131
D132
D132A V
D133
D133A T
D134
Note 1:
Param
No.
2:
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
V
T
T
DDP
Sym
IE
IW
RETD
IE
IW
PP
P
PR
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Required only if Single-Supply programming is disabled.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
V
or Write
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
for Read
for Block Erase
for Externally Timed Erase
Characteristic
PP
/RE3 pin
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
V
DD
V
Min
10K
4.5
4.5
40
—
—
MIN
1
+ 4
Typ†
100K
100
10
—
—
—
—
—
4
Max
12.5
5.5
5.5
5.5
—
—
—
—
—
Units
Year Provided no other
E/W -40°C to +85°C
mA
ms
ms
V
V
V
V
A
≤ +85°C for industrial
© 2009 Microchip Technology Inc.
(Note 2)
V
voltage
Using ICSP™ port
Using ICSP port
V
V
specifications are violated
MIN
DD
DD
> 4.5V
> 4.5V
= Minimum operating
Conditions