LPC1111FHN33/101,5 NXP Semiconductors, LPC1111FHN33/101,5 Datasheet - Page 48
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LPC1111FHN33/101,5
Manufacturer Part Number
LPC1111FHN33/101,5
Description
IC MCU 32BIT 8KB FLASH 33HVQFN
Manufacturer
NXP Semiconductors
Series
LPC1100r
Datasheets
1.LPC1114FHN333015.pdf
(2 pages)
2.LPC1114FHN333015.pdf
(66 pages)
3.LPC1114FHN333015.pdf
(66 pages)
Specifications of LPC1111FHN33/101,5
Program Memory Type
FLASH
Program Memory Size
8KB (8K x 8)
Package / Case
33-VQFN Exposed Pad, 33-HVQFN, 33-SQFN, 33-DHVQFN
Core Processor
ARM Cortex-M0
Core Size
32-Bit
Speed
50MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, WDT
Number Of I /o
28
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
LPC11
Core
ARM Cortex M0
Data Bus Width
32 bit
Data Ram Size
8 KB
Interface Type
I2C, SPI, UART
Number Of Programmable I/os
28
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
MDK-ARM, RL-ARM, ULINK2
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Package
33HVQFN EP
Device Core
ARM Cortex M0
Family Name
LPC1100
Maximum Speed
50 MHz
Number Of Timers
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
622-1005 - USB IN-CIRCUIT PROG ARM7 LPC2K
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4957
935290771551
935290771551
NXP Semiconductors
10. Dynamic characteristics
LPC1111_12_13_14
Product data sheet
10.1 Power-up ramp conditions
10.2 Flash memory
Table 11.
T
[1]
[2]
Table 12.
T
[1]
[2]
Symbol Parameter
t
t
V
Symbol
N
t
t
t
r
wait
ret
er
prog
amb
amb
Fig 24. Power-up ramp
I
endu
See
The wait time specifies the time the power supply must be at levels below 400 mV before ramping up.
Number of program/erase cycles.
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
= −40 °C to +85 °C.
= −40 °C to +85 °C, unless otherwise specified.
Figure
Condition: 0 < V
rise time
wait time
input voltage
Power-up characteristics
Flash characteristics
Parameter
endurance
retention time
erase time
programming
time
24.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 10 February 2011
I
≤ 400 mV at start of power-up (t = t
400 mV
Conditions
at t = t
at t = t
V
DD
0
Conditions
powered
unpowered
sector or multiple
consecutive
sectors
1
1
: 0 < V
on pin V
I
≤ 400 mV
DD
t = t
1
32-bit ARM Cortex-M0 microcontroller
[1]
[2]
1
)
LPC1111/12/13/14
Min
10000
10
20
95
0.95
t
wait
[1][2]
t
r
[1]
002aag001
Min
0
12
0
Typ
100000
-
-
100
1
Typ
-
-
-
© NXP B.V. 2011. All rights reserved.
Max
500
-
400
Max
-
-
-
105
1.05
48 of 66
Unit
ms
μs
mV
Unit
cycles
years
years
ms
ms