MC9S08QG8CDNE Freescale Semiconductor, MC9S08QG8CDNE Datasheet - Page 287
![IC MCU 8K FLASH 8MHZ 8-SOIC](/photos/12/33/123364/mc9s08qg8cdne_sml.jpg)
MC9S08QG8CDNE
Manufacturer Part Number
MC9S08QG8CDNE
Description
IC MCU 8K FLASH 8MHZ 8-SOIC
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.MC9S08QG8CDTER.pdf
(314 pages)
Specifications of MC9S08QG8CDNE
Core Processor
HCS08
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
4
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Processor Series
S08QG
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
SCI/SPI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
12
Number Of Timers
1
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08QG8E
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
For Use With
DEMO9S08QG8E - BOARD DEMO FOR MC9S08QG8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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A.11 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
Freescale Semiconductor
1
2
3
4
Supply voltage for program/erase:
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how
Motorola defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Motorola defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by a software setting.
T
T = 25°C
L
to T
H
= –40°C to + 125°C
4
2
(2)
Characteristic
1
3
(2)
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 5
(2)
Table A-15. FLASH Characteristics
T > 85 °C
T ≤ 85°C
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Mass
D_ret
Burst
Page
Fcyc
Read
prog
10,000
Min
150
1.8
2.1
1.8
15
5
100,000
Typical
20,000
4000
100
Appendix A Electrical Characteristics
—
—
—
—
—
—
9
4
Max
6.67
200
3.6
3.6
3.6
—
—
—
DD
cycles
years
supply.
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
285
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