MC9S08QE8CLC Freescale Semiconductor, MC9S08QE8CLC Datasheet - Page 12

• Manufacturer Part Number: MC9S08QE8CLC
• Description: IC MCU 8BIT 8K FLASH 32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QE8CLC

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, PWM, WDT
• Number Of I /o: 26
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 20MHz
• Interface Type: I2C/SCI/SPI
• Total Internal Ram Size: 512Byte
• # I/os (max): 26
• Number Of Timers - General Purpose: 2
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• On-chip Adc: 10-chx12-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Package Type: LQFP
• Processor Series: S08QE
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 26
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMOQE128, EVBQE128
• Minimum Operating Temperature: - 40 C
• Package: 32LQFP
• Family Name: HCS08
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 2.5|3.3 V
• For Use With: DEMO9S08QE8 - BOARD DEMO FOR MC9S08Q
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics
12
1
2
3
4
5
6
7
8
Num C
12b
13
14
15
16
17
18
19
20
21
Typical values are measured at 25 C. Characterized, not tested
As the supply voltage rises, the LVD circuit will hold the MCU in reset until the supply has risen above V
The specified resistor value is the actual value internal to the device. The pullup or pulldown value may appear higher when
measured externally on the pin.
All functional non-supply pins, except for PTA5 are internally clamped to V
Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate
resistance values for positive and negative clamp voltages, then use the larger of the two values.
Power supply must maintain regulation within operating V
conditions. If the positive injection current (V
result in external power supply going out of regulation. Ensure that external V
injection current. This will be the greatest risk when the MCU is not consuming power. Examples are: if no system clock is
present, or if clock rate is very low (which would reduce overall power consumption).
Maximum is highest voltage that POR is guaranteed.
Factory trimmed at V
D POR re-arm time
C
C
C Input capacitance, all pins
C RAM retention voltage
C POR re-arm voltage
P Low-voltage detection threshold
P Low-voltage warning threshold
P
P Bandgap voltage reference
Pullup,
pulldown
resistors
DC injection
current
6
Low-voltage inhibit reset/recover
hysteresis
4, 5,
DD
Characteristic
(PTA5/IRQ/TCLK/RESET)
Total MCU limit, includes
= 3.0 V, Temp = 25 C
sum of all stressed pins
7
Single pin limit
8
Table 7. DC Characteristics (continued)
MC9S08QE8 Series Data Sheet, Rev. 8
In
> V
DD
Symbol
(Note
V
V
V
V
R
t
V
R
V
) is greater than I
POR
C
I
RAM
POR
LVW
LVD
PU,
IC
hys
PD
BG
In
3
)
DD
V
range during instantaneous and operating maximum current
IN
< V
V
V
Condition
V
V
DD
DD
DD
DD
SS
—
—
—
—
—
—
—
DD
, V
falling
falling
rising
rising
, the injection current may flow out of V
IN
SS
> V
DD
and V
DD
load will shunt current greater than maximum
DD
.
Min.
17.5
–0.2
1.80
1.88
2.08
1.15
0.9
–5
10
—
—
—
Typical
1.84
1.92
1.17
2.14
0.6
1.4
80
—
—
—
—
—
Freescale Semiconductor
1
LVDL
.
Max.
52.5
1.88
1.96
2.24
1.18
0.2
1.0
2.0
—
—
5
8
DD
and could
Unit
mA
mA
mV
k
pF
s
V
V
V
V
V