C8051F521A-IM Silicon Laboratories Inc, C8051F521A-IM Datasheet - Page 113

• Manufacturer Part Number: C8051F521A-IM
• Description: IC 8051 MCU 8K FLASH 10DFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F52xr

Specifications of C8051F521A-IM

• Program Memory Type: FLASH
• Program Memory Size: 8KB (8K x 8)
• Package / Case: 10-DFN
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 6
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.25 V
• Data Converters: A/D 6x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Processor Series: C8051F5x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: SPI/UART
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 3
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F500DK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 6-ch x 12-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 336-1488 - KIT DEV C8051F53XA, C8051F52XA770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1455 - ADAPTER PROGRAM TOOLSTICK F520
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1490-5

C8051F52x/F52xA/F53x/F53xA
12.1.2. Flash Erase Procedure
The Flash memory can be programmed by software using the MOVX write instruction with the address and
data byte to be programmed provided as normal operands. Before writing to Flash memory using MOVX,
Flash write operations must be enabled by: (1) setting the PSWE Program Store Write Enable bit
(PSCTL.0) to logic 1 (this directs the MOVX writes to target Flash memory); and (2) Writing the Flash key
codes in sequence to the Flash Lock register (FLKEY). The PSWE bit remains set until cleared by soft-
ware.
A write to Flash memory can clear bits to logic 0 but cannot set them; only an erase operation can set bits
to logic 1 in Flash. A byte location to be programmed should be erased before a new value is written.
The Flash memory is organized in 512-byte pages. The erase operation applies to an entire page (setting
all bytes in the page to 0xFF). To erase an entire 512-byte page, perform the following steps:
1. Disable interrupts (recommended).
2. Write the first key code to FLKEY: 0xA5.
3. Write the second key code to FLKEY: 0xF1.
4. Set the PSEE bit (register PSCTL).
5. Set the PSWE bit (register PSCTL).
6. Using the MOVX instruction, write a data byte to any location within the 512-byte page to be erased.
7. Clear the PSWE and PSEE bits.
8. Re-enable interrupts.
12.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
1. Disable interrupts.
2. Write the first key code to FLKEY: 0xA5.
3. Write the second key code to FLKEY: 0xF1.
4. Set the PSWE bit (register PSCTL).
5. Clear the PSEE bit (register PSCTL).
6. Using the MOVX instruction, write a single data byte to the desired location within the 512-byte sector.
7. Clear the PSWE bit.
8. Re-enable interrupts.
Steps 2–7 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
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