MC908QL4MDTER Freescale Semiconductor, MC908QL4MDTER Datasheet - Page 38

• Manufacturer Part Number: MC908QL4MDTER
• Description: IC MCU 8BIT 4K FLASH 16-TSSOP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908QL4MDTER

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: LIN (Local Interconnect Network)
• Peripherals: LVD, POR, PWM
• Number Of I /o: 13
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 6x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 16-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Memory
2.6.4 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes
starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0, or $XXE0. Use the
following step-by-step procedure to program a row of FLASH memory
Figure 2-4
This program sequence is repeated throughout the memory until all data is programmed.
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10. Clear the PGM bit
11. Wait for time, t
12. Clear the HVEN bit.
13. After time, t
1. The time between each FLASH address change, or the time between the last FLASH address programmed to clearing
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address being programmed
8. Wait for time, t
9. Repeat step 7 and 8 until all desired bytes within the row are programmed.
PGM bit, must not exceed the maximum programming time, t
address and data for programming.
shows a flowchart of the programming algorithm.
Do not program any byte in the FLASH more than once after a successful
erase operation. Reprogramming bits to a byte which is already
programmed is not allowed without first erasing the page in which the byte
resides or mass erasing the entire FLASH memory. Programming without
first erasing may disturb data stored in the FLASH.
The COP register at location $FFFF should not be written between steps
5-12, when the HVEN bit is set. Since this register is located at a valid
FLASH address, unpredictable behavior may occur if this location is written
while HVEN is set.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Memory
RCV
PROG
NVH
, the memory can be accessed in read mode again.
NVS
PGS
Characteristics.
.
(1)
.
.
.
.
MC68HC908QL4 Data Sheet, Rev. 8
NOTE
NOTE
NOTE
PROG
PROG
maximum.
(1)
.
maximum, see
17.15
Freescale Semiconductor