MC68908GZ8VFAE Freescale Semiconductor, MC68908GZ8VFAE Datasheet - Page 302
![IC MCU 8BIT 8K FLASH 48-LQFP](/photos/37/62/376278/tqfp-48_sml.jpg)
MC68908GZ8VFAE
Manufacturer Part Number
MC68908GZ8VFAE
Description
IC MCU 8BIT 8K FLASH 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC68908GZ8CFJER.pdf
(314 pages)
Specifications of MC68908GZ8VFAE
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
CAN, LIN, SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
37
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
48-LQFP
Processor Series
M689xx
Core
HC08
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
ESCI, SPI, UART
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
37
Number Of Timers
2
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, M68CBL05AE, DEMO908GZ60E, M68EML08GZE
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC68908GZ8VFAE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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Electrical Specifications
21.15 Memory Characteristics
302
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance
FLASH data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. Typical endurance was evaluated for this product family. For additional information on how Freescale Semiconductor
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
Limited endurance (<1 K cycles)
Maximum endurance (>1 K cycles)
Read
RCV
HV
memory.
memory.
clearing HVEN to 0.
t
defines Typical Endurance, please refer to Engineering Bulletin EB619.
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines Typical Data
Retention, please refer to Engineering Bulletin EB618.
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
is defined as the frequency range for which the FLASH memory can be read.
(6)
Characteristic
(7)
MC68HC908GZ16 • MC68HC908GZ8 Data Sheet, Rev. 4
NVS
+ t
Erase
MErase
NVH
(min), there is no erase disturb, but it reduces the endurance of the FLASH
+ t
(min), there is no erase disturb, but it reduces the endurance of the FLASH
PGS
+ (t
PROG
x 32) ≤ t
t
Symbol
MErase
t
f
t
Erase
Read
t
V
t
RCV
t
HV
PROG
t
t
t
NVHL
HV
NVH
PGS
NVS
RDR
—
—
—
(5)
maximum.
(4)
(1)
(2)
(3)
10 k
Min
100
1.3
0.9
3.6
10
30
15
—
1
0
4
5
5
1
100 k
Typ
100
—
—
—
—
—
—
—
—
—
—
—
1
4
Freescale Semiconductor
Max
8 M
1.1
5.5
40
—
—
—
—
—
—
—
—
—
—
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
μs
μs
μs
μs
μs
μs
V
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