MCF51CN128CGT Freescale Semiconductor, MCF51CN128CGT Datasheet - Page 35

IC MCU 32BIT 128K FLASH 48-QFN

MCF51CN128CGT

Manufacturer Part Number
MCF51CN128CGT
Description
IC MCU 32BIT 128K FLASH 48-QFN
Manufacturer
Freescale Semiconductor
Series
MCF51CNr
Datasheets

Specifications of MCF51CN128CGT

Core Processor
Coldfire V1
Core Size
32-Bit
Speed
50MHz
Connectivity
Ethernet, I²C, SCI, SPI
Peripherals
LVD, PWM, WDT
Number Of I /o
38
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 12x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
48-QFN
Processor Series
MCF51CN
Core
ColdFire V1
Data Bus Width
32 bit
Data Ram Size
24 KB
Interface Type
I2C, SPI, SCI
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
38
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JLINK-CF-BDM26, EWCF
Development Tools By Supplier
TWR-MCF51CN-KIT, TWR-SER, TWR-ELEV, TOWER
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 12 Channel
For Use With
TWR-MCF51CN - KIT TOWER BOARDTWR-MCF51CN-KIT - KIT TOWER BOARD/SERIAL/ELEVATOR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCF51CN128CGT
Manufacturer:
CIRRUS
Quantity:
1 355
3.12.5
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section of the MCF51CN128 Reference Manual.
3.13
Electromagnetic compatibility (EMC) performance is highly dependent on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
Freescale Semiconductor
1
2
3
4
5
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on
how Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25 °C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
C
D
D
D
D
P
P
P
P
D
D
C
C
DD
Supply voltage for program/erase
-40 °C to 85 °C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Longword program time (random location)
Longword program time (burst mode)
Page erase time
Mass erase time
Longword program current
Page erase current
Program/erase endurance
Data retention
EMC Performance
T
T = 25°C
Flash Specifications
= 3.3 V, bus frequency = 8.0 MHz.
L
to T
H
= –40°C to + 85°C
5
Characteristic
2
(2)
3
MCF51CN128 ColdFire Microcontroller Data Sheet, Rev. 4
1
4
3
Table 22. Flash Characteristics
(2)
(2)
V
Symbol
prog/erase
R
R
V
f
t
t
t
t
t
t
FCLK
IDDBP
IDDPE
D_ret
Burst
Page
Mass
Fcyc
Read
prog
DD
10,000
. These values are measured at room temperatures
Min
150
1.8
1.8
15
5
100,000
Typical
20,000
4000
100
9.7
7.6
9
4
DD
supply. For more detailed
Electrical Characteristics
Max
6.67
200
3.6
3.6
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
35

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