MC9S12XET256MAA Freescale Semiconductor, MC9S12XET256MAA Datasheet - Page 1223
MC9S12XET256MAA
Manufacturer Part Number
MC9S12XET256MAA
Description
MCU 16BIT 256K FLASH 80-QFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet
1.MC9S12XEP768CAL.pdf
(1328 pages)
Specifications of MC9S12XET256MAA
Core Processor
HCS12X
Core Size
16-Bit
Speed
50MHz
Connectivity
CAN, EBI/EMI, I²C, IrDA, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
59
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.72 V ~ 5.5 V
Data Converters
A/D 12x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
80-QFP
Processor Series
S12XE
Core
HCS12
Data Bus Width
16 bit
Data Ram Size
16 KB
Interface Type
CAN, SCI, SPI
Maximum Clock Frequency
50 MHz
Number Of Programmable I/os
59
Number Of Timers
25
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
KIT33812ECUEVME, EVB9S12XEP100, DEMO9S12XEP100
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 8 Channel
Package
80PQFP
Family Name
HCS12X
Maximum Speed
50 MHz
Operating Supply Voltage
1.8|2.8|5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S12XET256MAA
Manufacturer:
CYPRESS
Quantity:
210
Company:
Part Number:
MC9S12XET256MAA
Manufacturer:
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Quantity:
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Part Number:
MC9S12XET256MAA
Manufacturer:
FREESCALE
Quantity:
20 000
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1
A.2.3
Table A-17
injection, input capacitance and source resistance.
A.2.3.1
For the following definitions see also
Differential non-linearity (DNL) is defined as the difference between two adjacent switching steps.
The integral non-linearity (INL) is defined as the sum of all DNLs:
Freescale Semiconductor
Conditions are shown in
Num C
Refer to A.2.2.2 for further information concerning source resistance
1
2
3
4
5
6
C Max input source resistance
D Total input capacitance Non sampling
D Input internal Resistance
C Disruptive analog input current
C Coupling ratio positive current injection
C Coupling ratio negative current injection
The additional input voltage error on the converted channel can be calculated as:
with I
Total input capacitance Sampling
and
ATD Accuracy
INJ
ATD Accuracy Definitions
V
Table A-18
being the sum of the currents injected into the two pins adjacent to the converted channel.
ERR
Table A-4
= K * R
specify the ATD conversion performance excluding any errors due to current
S
unless otherwise noted
Rating
* I
MC9S12XE-Family Reference Manual Rev. 1.23
Table A-16. ATD Electrical Characteristics
1
INJ
INL n ( )
Figure
DNL i ( )
=
i
A-1.
∑
=
n
1
=
DNL i ( )
V
------------------------- - 1
i
1LSB
–
V
i 1
=
–
Symbol
V
-------------------- - n
1LSB
C
C
R
n
I
–
R
K
K
NA
INN
INS
INA
–
S
p
n
V
0
–
–2.5
Min
—
—
—
—
—
—
Appendix A Electrical Characteristics
Typ
—
—
—
—
—
—
5
1E-4
2E-3
Max
2.5
10
16
15
1
Unit
A/A
A/A
mA
KΩ
kΩ
pF
1223
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