MC9S08GT60ACFDE Freescale Semiconductor, MC9S08GT60ACFDE Datasheet - Page 53

• Manufacturer Part Number: MC9S08GT60ACFDE
• Description: IC MCU 60K FLASH 4K RAM 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08GT60ACFDE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN
• Processor Series: S08GT
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 4 KB
• Interface Type: SCI/SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 39
• Number Of Timers: 2
• Operating Supply Voltage: 0 V to 1.8 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: M68EVB908GB60E, M68DEMO908GB60E
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• For Use With: M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

4.4.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the flash array
does not need to be disabled between program operations. Ordinarily, when a program or erase command
is issued, an internal charge pump associated with the flash memory must be enabled to supply high
voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst
program command is issued, the charge pump is enabled and then remains enabled after completion of the
burst program operation if the following two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
Freescale Semiconductor
1. The next burst program command has been queued before the current program operation has
2. The next sequential address selects a byte on the same physical row as the current byte being
completed.
programmed. A row of flash memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
Figure 4-2. Flash Program and Erase Flowchart
0
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
TO LAUNCH COMMAND
MC9S08GB60A Data Sheet, Rev. 2
AND CLEAR FCBEF
WRITE TO FCDIV
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FACCERR ?
FPVIO OR
START
FCCF ?
DONE
1
NO
(1)
(2)
0
YES
(2)
checking FCBEF or FCCF.
Wait at least four bus cycles before
(1)
ERROR EXIT
after reset.
Only required once
Chapter 4 Memory
53