M30281F6HP#U5B Renesas Electronics America, M30281F6HP#U5B Datasheet - Page 399

• Manufacturer Part Number: M30281F6HP#U5B
• Description: IC M16C/28 MCU FLASH 48K 64LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/Tiny/28r

Specifications of M30281F6HP#U5B

• Core Processor: M16C/60
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, POR, PWM, Voltage Detect, WDT
• Number Of I /o: 55
• Program Memory Size: 48KB (48K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 13x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 64-LQFP
• For Use With: R0K330290S000BE - KIT EVAL STARTER FOR M16C/29M30290T2-CPE - EMULATOR COMPACT M16C/26A/28/29M30290T2-CPE-HP - EMULATOR COMPACT FOR M16C/TINY
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

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20.14.14 Definition of Programming/Erasure Times
20.14.15 Flash Memory Version Electrical Characteristics 10,000 E/W cycle products (U7, U9)
20.14.16 Boot Mode
20.14.17 Standard Serial I/O Mode
C
2
9
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"Number of programs and erasure" refers to the number of erasure per block.
If the number of program and erasure is n (n=100 1,000 10,000) each block can be erased n times.
For example, if a 2K byte block A is erased after writing 1 word data 1024 times, each to a different
address, this is counted as one program and erasure. However, data cannot be written to the same
adrress more than once without erasing the block. (Rewrite prohibited)
If the number of Block A or B E/W cycle is already known to exceed 100, set the FMR17 bit in the FMR1
register to "1" (one wait) after reset. When the FMR17 bit is set to "1", one wait state is inserted per
access to Block A or B, regardless of the value of the PM17 bit in the PM1 register. Wait state insertion
during access to all other blocks, as well as to internal RAM, is controlled by PM17, regardless of the
setting of FMR17.
To use the limited number of erasure efficiently, write to unused address within the block instead of
rewrite. Erase block only after all possible address are used. For example, an 8-word program can be
written 128 times before erase becomes necessary.
Maintaining an equal number of erasure between Block A and B will also improve efficiency.
We recommend keeping track of the number of times erasure is used and limiting the number of erasure.
An indeterminate value is sometimes output in the I/O port until the internal power supply becomes stable
when "H" is applied to the CNV
When setting the CNV
When the CNV
In flash memory version (128 K + 4 K), a high-level ("H") signal is output from P9
in standard serial I/O mode. In standard serial I/O mode, input an "H" signal to P9
open.
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(1) Apply an "L" signal to the RESET pin and the CNV
(2) Bring V
(3) Apply an "H" signal to the CNV
(4) Apply an "H" signal to the RESET pin.
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7
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pin is “H” and RESET pin is “L”, P6
page 377
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to more than 2.7V, and wait at least 2msec. (Internal power supply stable waiting time)
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SS
1
6
pin to "H", the following procedure is required:
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8
3
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SS
8
____________
5
pin and "L" is applied to the RESET pin.
____________
____________
SS
pin.
7
pin is connected to the pull-up resister.
SS
_____________
pin.
3
for certain period of time
3
or leave the port
20. Precautions