HD6473258P10V Renesas Electronics America, HD6473258P10V Datasheet - Page 220

MCU 5V 32K PB-FREE 64-DIP

HD6473258P10V

Manufacturer Part Number
HD6473258P10V
Description
MCU 5V 32K PB-FREE 64-DIP
Manufacturer
Renesas Electronics America
Series
H8® H8/325r
Datasheets

Specifications of HD6473258P10V

Core Size
8-Bit
Program Memory Size
32KB (32K x 8)
Oscillator Type
External
Core Processor
H8/300
Speed
10MHz
Connectivity
SCI, UART/USART
Number Of I /o
53
Program Memory Type
OTP
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Operating Temperature
-20°C ~ 75°C
Package / Case
64-DIP
No. Of I/o's
53
Ram Memory Size
1024Byte
Cpu Speed
10MHz
No. Of Timers
3
Digital Ic Case Style
DIP
Supply Voltage
RoHS Compliant
Controller Family/series
H8/330
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Peripherals
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD6473258P10V
Manufacturer:
RENESAS
Quantity:
600
Part Number:
HD6473258P10V
Manufacturer:
RENESAS
Quantity:
1 200
Part Number:
HD6473258P10V
Manufacturer:
HITACHI/日立
Quantity:
20 000
11.3.3 Notes on Writing
(1) Write with the specified voltages and timing. The programming voltage (V
Caution: Applied voltages in excess of the specified values can permanently destroy the chip. Be
particularly careful about the PROM writer’s overshoot characteristics.
If the PROM writer is set to Intel specifications or Hitachi HN27C101, HN27256 or HN27C256
specifications, V
(2) Before writing data, check that the socket adapter and chip are correctly mounted in the
PROM writer. Overcurrent damage to the chip can result if the index marks on the PROM writer,
socket adapter, and chip are not correctly aligned.
(3) Don’t touch the socket adapter or chip while writing. Touching either of these can cause
contact faults and write errors.
(4) Page programming is not supported. Do not select page programming mode.
11.3.4 Reliability of Written Data
An effective way to assure the data holding characteristics of the programmed chips is to bake them
at 150˚C, then screen them for data errors. This procedure quickly eliminates chips with PROM
memory cells prone to early failure.
Figure 11-12 shows the recommended screening procedure.
Note:
PP
Baking time should be measured from the point when the baking oven reaches 150°C.
will be 12.5 V.
Figure 11-12. Recommended Screening Procedure
Bake with power off
150° ± 10°C, 48 Hr
Read and check program
Vcc = 4.5 V and 5.5 V
Write program
Install
215
+ 8 Hr *
– 0 Hr
Fig. 11-6
PP
) is 12.5 V.

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