HD64F3337YCP16V Renesas Electronics America, HD64F3337YCP16V Datasheet - Page 525

• Manufacturer Part Number: HD64F3337YCP16V
• Description: MCU 3/5V 60K PB-FREE 84-PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16V

• Core Size: 8-Bit
• Program Memory Size: 60KB (60K x 8)
• Oscillator Type: Internal
• Core Processor: H8/300
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• No. Of I/o's: 74
• Ram Memory Size: 1KB
• Cpu Speed: 16MHz
• No. Of Timers: 6
• No. Of Pwm Channels: 2
• Digital Ic Case Style: PLCC
• Controller Family/series: H8/300
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Table 20.19
Conditions: V
Item
Programming time
Erase time
Number of writing/erasing count
Verify setup time 1
Verify setup time 2
Flash memory read setup
time
Notes: *1 Set the times following the programming/erasing algorithm shown in section 20.
* 4
*2 The programming time is the time during which a byte is programmed or the P bit in the
*3 The erase time is the time during which all 60-kbyte blocks are erased or the E bit in the
*4 After power-on when using an external colck source, after return from standby mode, or
*5 In the LH version, V
*1, * 3
flash memory control register (FLMCR) is set. It does not include the program-verify
time.
flash memory control register (FLMCR) is set . It does not include the prewrite time
before erasure or erase-verify time.
after switching the programming voltage (V
setup time has elapsed before reading flash memory.
When V
when the FV
V
+85 C (wide-range specifications)
AC Characteristics of Flash Memory
CC
PP
= 12.0 0.6 V, T
= 2.7 V to 5.5 V
*1, *2
* 1
* 1
PP
is released, the flash memory read setup time is defined as the period from
PP
pin has reached V
CC
= 3.0 V to 5.5 V, AV
*5
a
Symbol
t
t
N
t
t
t
, AV
P
E
VS1
VS2
FRS
= –20 C to +75 C (regular specifications), T
WEC
CC
= 2.7 V to 5.5 V
CC
Min
—
—
—
4
2
50
100
+ 2 V until flash memory can be read.
CC
PP
Typ
50
1
—
—
—
—
—
= 3.0 V to 5.5 V
) from 12 V to V
*5
, V
Max
1000
30
100
—
—
—
—
SS
= AV
CC
SS
Unit
s
Times
s
s
s
s
, make sure that this read
= 0 V,
Test Conditions
V
V
a
CC
CC
= –40 C to
< 4.5 V
4.5 V
493