R5F21238JFP#U0 Renesas Electronics America, R5F21238JFP#U0 Datasheet - Page 471
![IC R8C/23 MCU FLASH 64K 48LQFP](/photos/28/61/286102/48-lqfp__plqp0048kb-a_sml.jpg)
R5F21238JFP#U0
Manufacturer Part Number
R5F21238JFP#U0
Description
IC R8C/23 MCU FLASH 64K 48LQFP
Manufacturer
Renesas Electronics America
Series
R8C/2x/23r
Datasheet
1.R5F21237DFPU0.pdf
(551 pages)
Specifications of R5F21238JFP#U0
Core Processor
R8C
Core Size
16/32-Bit
Speed
20MHz
Connectivity
CAN, I²C, LIN, SIO, SSU, UART/USART
Peripherals
POR, Voltage Detect, WDT
Number Of I /o
41
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
3K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
For Use With
RCDK8C - KIT DEV EVAL FOR CAN R8C/23R0E521237CPE00 - EMULATOR COMPACT R8C/20/21/22/23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F21238JFP#U0R5F21238JFP#U1
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
R5F21238JFP#U0R5F21238JFP#V0
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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R8C/22 Group, R8C/23 Group
Rev.2.00 Aug 20, 2008
REJ09B0251-0200
Table 21.4
NOTES:
−
−
−
t
−
−
−
−
−
−
−
d(SR-SUS)
Symbol
1. V
2. Definition of programming/erasure endurance
3. Endurance to guarantee all electrical characteristics after program and erase (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure endurance can be reduced by writing to
5. If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 1,000), each block can be erased n times.
For example, if 1,024 1-byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is
erased, the programming/erasure endurance still stands at one. However, the same address must not be programmed more
than once per erase operation (overwriting prohibited).
sequential addresses in turn so that as much of the block as possible is used up before performing an erase operation. For
example, when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to
128 groups before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each
block and limit the number of erase operations to a certain number.
least three times until the erase error does not occur.
CC
Program/erase endurance
Byte program time
Block erase time
Time delay from suspend request until
erase suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
= 2.7 to 5.5 V at Topr = -40 to 85 ° C (D, J version) / -40 to 125 ° C (K version), unless otherwise specified.
Flash Memory (Program ROM) Electrical Characteristics
(7)
Parameter
Page 449 of 501
(2)
R8C/22 Group
R8C/23 Group
Ambient temperature = 55 ° C
Conditions
1,000
100
Min.
650
2.7
2.7
20
−
−
−
0
−
0
(3)
(3)
Typ.
21. Electrical Characteristics
0.4
50
Standard
−
−
−
−
−
−
−
−
−
−
97 + CPU clock
3 + CPU clock
×
×
6 cycle
4 cycle
Max.
400
5.5
5.5
60
−
−
9
−
−
−
times
times
year
Unit
µ s
µ s
µ s
ns
µ s
° C
V
V
s
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